Session information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

[18a-E10-1~10] Nanocarbon Technology

Tue. Mar 18, 2014 9:00 AM - 11:45 AM E10 (E204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-E10-1] Large-area ZnO thin films by spray pyrolysis.

^○Hiroki Akenaga¹, Yoshinori Kobayashi¹, Keiji Miyachi¹, Akiko Ide², Kenji Yoshino² (Asahi Sunac Corpration¹, Univ. Miyazaki²)

9:15 AM - 9:30 AM

[18a-E10-2] Annealing temperature dependence of electrical properties for SiO₂/GZO bilayer thin film

^○Sota Inoue¹, Hiroki Kikuchi¹, Seiji Ichiyanagi¹, Shuhei Funaki¹, Yasuji Yamada¹ (Shimane Univ.¹)

9:30 AM - 9:45 AM

[18a-E10-3] Electrical properties of transparent conductive multilayer films deposited by electrostatic spray deposition

^○Hiroki Shimomura¹, Shinichi Yamamoto¹ (Ryukoku Univ.¹)

9:45 AM - 10:00 AM

[18a-E10-4] Properties of V-doped ZnO Transparent Conductive and Piezoelectric Thin Films by Introducing Homo-Buffer Layer

^○Tatsuya Mori¹, Dai Abe², Hiroshi Chiba¹, Shuhei Okuda¹, Tomoyuki Kawashima¹, Katsuyoshi Washio^1,2 (Tohoku Univ., Graduate School of Engineering¹, Tohoku Univ., Department of Engineering²)

10:00 AM - 10:15 AM

[18a-E10-5] Polarity of ZnO based transparent conductive films characterized by x-ray photoemission spectroscopy

^○Hisao Makino¹, Huanping Song¹, Jun-ichi Nomoto¹, Tetsuya Yamamoto¹ (Kochi Univ. of Tech¹)

Break 10:15〜10:30 (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[18a-E10-6] Optimization of deposition power to improve electrical properties of highly transparent conductive Al-doped ZnO films deposited by RF-superimposed DC magnetron sputtering

^○Junichi Nomoto¹, Huaping Song¹, Hisao Makino¹, Seiichi Kishimoto^1,2, Tetsuya Yamamoto¹ (Research Inst. Kochi Univ. Tech.¹, Kochi National College of Tech.²)

10:45 AM - 11:00 AM

[18a-E10-7] Study of carrier scattering mechanisms of transparent conducting impurity-doped ZnO thin films

^○Toshihiro Miyata¹, Toshinori Yamanaka¹, Tadatsugu Minami¹ (OEDS R&D Center¹)

11:00 AM - 11:15 AM

[18a-E10-8] Optical and Electric Properties of InGaZnO Transparent Conductor

^○Takuya Hirohashi¹, Masashi Oota¹, Noritaka Ishihara¹, Yusuke Nonaka¹, Shunpei Yamazaki¹, Masahiro Katayama², Chieko Misawa², Yuka Chubati², Takashi Hamochi², Kenichi Okazaki², Junichi Koezuka² (Semiconductor Energy Laboratory Co., LTD.¹, Advanced Film Device Inc.²)

11:15 AM - 11:30 AM

[18a-E10-9] Study of transparent conductive InGaZnO thin films

^○Masashi Oota¹, Noritaka Ishihara¹, Yoichi Kurosawa¹, Yusuke Nonaka¹, Takuya Hirohashi¹, Masahiro Takahashi¹, Shunpei Yamazaki¹, Toshimitsu Obonai², Yasuharu Hosaka², Junichi Koezuka² (Semiconductor Energy Laboratory Co., Ltd.¹, Advanced Film Device Inc.²)

11:30 AM - 11:45 AM

[18a-E10-10] Calculation for mechanism of N-type behavior in InGaZnO

^○Motoki Nakashima¹, Takuya Hirohashi¹, Masahiro Takahashi¹, Shunpei Yamazaki¹ (Semiconductor Energy Laboratory Co., Ltd.¹)

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