Oral presentation

06. Thin Films and Surfaces » 6.2 Carbon-based thin films

[18p-D6-1~19] 6.2 Carbon-based thin films

Tue. Mar 18, 2014 1:30 PM - 6:45 PM D6 (D209)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:15〜13:30 (12:15 PM - 1:30 PM)

1:30 PM - 1:45 PM

[18p-D6-1] Formation of atomically flat OH-terminated diamond(111) surfaces

^○Daisuke Miyata¹, Syogo Kamiya¹, Norio Tokuda^1,2,3, Toshiharu Makino^2,3, Daisuke Takeuchi^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad.School of Natural Sci.&Tech.Kanazawa Univ.¹, AIST², JST, CREST³)

1:45 PM - 2:00 PM

△ [18p-D6-2] Surface structure of (111) diamond with recovered surface conduction after heat treatment

^○Yuji Seshimo¹, Tomohiro Hakamata¹, Wako Ono¹, Yuki Yokoyama¹, Daiki Utsunomiya¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

2:00 PM - 2:15 PM

[18p-D6-3] Oxygen Coverage and Structure on Hot-Acid- and VUV-Ozone-Treated Diamond (001) Surfaces

^○Shozo Kono¹, Tokuyuki Teraji², Hideyuki Kodama¹, Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹, NIMS²)

2:15 PM - 2:30 PM

△ [18p-D6-4] Synchrotron X-Ray Topography Observation of CVD Diamond Single Crystal

^○（B）Satoshi Masuya¹, Ryuichi Murakami¹, Hitoshi Sumiya², Makoto Kasu¹ (Saga Univ.¹, Sumitomo Electric.²)

2:30 PM - 2:45 PM

△ [18p-D6-5] Defect examination of heteroepitaxial diamond by etch pit method Ⅴ

^○Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹, TOPLAS ENG.²)

2:45 PM - 3:00 PM

[18p-D6-6] Dislocations of HPHT Diamond Single Crystals Observed by Synchrotron Radiation X-ray Topography

Ryuichi Murakami¹, Satoshi Masuya¹, Akikazu Matsunaga¹, Kazuya Harada¹, Hitoshi Sumiya², ^○Makoto Kasu¹ (Saga Univ.¹, Sumitomo Electric.²)

Break 15:00〜15:15 (3:00 PM - 3:15 PM)

3:15 PM - 3:30 PM

[18p-D6-7] Breakdown electric field of diamond estimated using ionization integrals

^○Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (Waseda Nano Inst.¹, Waseda Univ.²)

3:30 PM - 3:45 PM

△ [18p-D6-8] Wide Range Temperature(10-673K) Operation of C-H Bonds Diamond MOSFETs

^○Dechen Xu¹, Hidetoshi Tsuboi¹, Tomoya Naruo¹, Tetsuya Yamada¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

3:45 PM - 4:00 PM

△ [18p-D6-9] Enhancement of dielectric strength of ALD-Al₂O₃ films using heavy-water oxidant

^○Kazuhiro Kuruma¹, Tatsuya Saito¹, Akira Daicho¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

4:00 PM - 4:15 PM

△ [18p-D6-10] Enhancing breakdown voltage of ALD-Al2O3 hydrogen-terminated diamond MOSFETs

^○Tetsuya Yamada¹, Tomoya Naruo¹, Hidetoshi Tsuboi¹, Dechen Xu¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

4:15 PM - 4:30 PM

[18p-D6-11] Barrier Height of Au-Ohmic Electrode on Diamond (001) Surface

^○Shozo Kono¹, Tokuyuki Teraji², Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹, NIMS²)

4:30 PM - 4:45 PM

△ [18p-D6-12] The valuation of surface potential for heavily doped n-type diamond semiconductors by Kelvin probe force microscopy

^○Kazuya Shirota^1,2,3, Daisuke Takeuchi^2,3, Masahiko Ogura^2,3, Hiromitsu Kato^2,3, Toshiharu Makino^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^1,2,3 (Tsukuba Univ.¹, AIST², CREST³)

Break 16:45〜17:00 (4:45 PM - 5:00 PM)

5:00 PM - 5:15 PM

▼ [18p-D6-13] Normally-off HfO2/diamond field effect transistors fabrication

^○Jiangwei Liu¹, Meiyong Liao¹, Mastaka Imura¹, Yasuo Koide¹ (National Institute for Materials Science¹)

5:15 PM - 5:30 PM

▲ [18p-D6-14] WC/p-diamond Schottky Diode Behaviour at High Temperature

^○（PC）Alexandre Fiori¹, Tokuyuki Teraji¹, Yasuo Koide¹ (NIMS¹)

5:30 PM - 5:45 PM

[18p-D6-15] Frequency dispersion properties at Al₂O₃ and HfO₂/H-terminated diamond interfaces

^○Yasuo Koide^1,2, Jiangwei Liu¹, Meiyong Liao¹, Masataka Imura¹, Hirotaka Osatao², Eiichiro Watanabe², Daijyu Tsuya² (NIMS¹, NIMS NanoFab²)

5:45 PM - 6:00 PM

△ [18p-D6-16] Fabrication of fluorine terminated electrolyte Solution Gate FET with boron doped channels

^○Mikinori Kobayashi¹, Yukihiro Shintani^1,2, Miho Myodo¹, Hiroshi Kawarada¹ (Waseda University¹, Yokogawa Electric Corp.²)

6:00 PM - 6:15 PM

△ [18p-D6-17] Superconductivity of Heavily Boron-doped Diamond(111) by Spherical-Resonator-Microwave-Plasma CVD

^○Taisuke Kageura¹, Mitsuyasu Koga¹, Takahide Yamaguchi², Yoshihiko Takano², Hiroshi Kawarada¹ (Waseda Univ.¹, NIMS²)

6:15 PM - 6:30 PM

[18p-D6-18] Misorientation angle dependence of homoepitaxial growth on (001) phosphorus-doped n-type diamond

^○Hiroyuki Kawashima^1,3, hiromitsu Kato^1,3, Masahiko Ogura^1,3, Mariko Suzuki^1,2,3, Toshiharu Makino^1,3, Daisuke Takeuchi^1,3, Satoshi Yamasaki^1,3 (AIST¹, Toshiba Corp.², JST-CREST³)

6:30 PM - 6:45 PM

[18p-D6-19] Electrical properties for diamond Schottky-pn diode

^○Toshiharu Makino^1,2, Daisuke Kuwabara^1,2,3, Tsubasa Matsumoto^1,2,3, Hiromitsu Kato^1,2, Daisuke Takeuchi^1,2, Masahiko Ogura^1,2, Hideyo Okushi^1,2, Satoshi Yamasaki^1,2,3 (ETRI, AIST¹, CREST/JST², Univ. of Tsukuba³)