Symposium

[18a-E1-1~6] Developments and Challenges for Resistance Change Memories Technology

Tue. Mar 18, 2014 9:00 AM - 11:45 AM E1 (E101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [18a-E1-1] Prospect of resistance change memories for low power and ultra high density nonvolatile memories

^○shoso shingubara¹ (Kansai University¹)

9:15 AM - 9:45 AM

▲ [18a-E1-2] Resistive Switching in Metal Oxides: Mechanisms and Applications

^○Akihito Sawa¹ (AIST¹)

9:45 AM - 10:15 AM

[18a-E1-3] Current Status of Mechanism Elucidation of Resistive Switching Effect in Resistive Random Access Memory (ReRAM)

^○Kentaro Kinoshita^1,2, Satoru Kishida^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

Break 10:15〜10:30 （10:15 AM - 10:30 AM）

10:30 AM - 11:00 AM

▲ [18a-E1-4] Bipolar Resistive Switching Behaviors of Metal Oxide Single Crystals

^○Dong-Wook Kim¹ (Ewha Womans Univ.¹)

11:00 AM - 11:30 AM

▲ [18a-E1-5] Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

^○Hwang Cheol Seong¹ (Seoul National University¹)

11:30 AM - 11:45 AM

▲ [18a-E1-6] Switching Mechanism of Resistance Random Access Memory Based on the First-Principles Calculations

^○Takahiro Yamasaki¹, Takahisa Ohno^1,2 (NIMS¹, Univ. of Tokyo IIS²)

Symposium

[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology

Tue. Mar 18, 2014 1:15 PM - 6:30 PM E1 (E101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:45 PM

▲ [18p-E1-1] ReRAM/NAND Flash Memory Hybrid Memory System for Big Data Application

^○Ken Takeuchi¹ (Chuo Univ¹)

1:45 PM - 2:15 PM

▲ [18p-E1-2] Observation of ReRAM switching by means of TEM/STM

^○Masashi Arita¹, Yasuo Takahashi¹ (Hokkaido Univ. IST¹)

2:15 PM - 2:45 PM

▲ [18p-E1-3] Data Retention of TaO_x ReRAM in Low Current Operation and after Cycling

^○Takeki Ninomiya¹, Shunsaku Muraoka¹, Zhiqiang Wei¹ (Panasonic¹)

2:45 PM - 3:15 PM

▲ [18p-E1-4] On the reliability of Metal Oxide RRAM

^○Ming-Jinn Tsai¹ (ＩＴＲＩ¹)

Break 15:15〜15:30 （3:15 PM - 3:30 PM）

3:30 PM - 4:00 PM

▲ [18p-E1-5] Atomic switch: Resistance change memory based on cation transport and redox reactions in oxide thin layers

^○Tohru Tsuruoka^1,2, Tsuyoshi Hasegawa^1,2, Kazuya Terabe¹, Masakazu Aono¹ (NIMS¹, JST-CREST²)

4:00 PM - 4:15 PM

▲ [18p-E1-6] 0.3V Programmable Logic using Complementary Atom Switch

Makoto Miyamura¹, Toshitsugu Sakamoto¹, ^○Munehiro Tada¹, Naoki Banno¹, Koichiro Okamoto¹, Noriyuki Iguchi¹, Hiromitsu Hada¹ (LEAP¹)

4:15 PM - 4:45 PM

▲ [18p-E1-7] Impact of oxidization, nitridation, and process temperature on materials for ReRAM

^○Hisashi Shima¹, Hiroyuki Akinaga¹ (AIST NeRI¹)

4:45 PM - 5:00 PM

▲ [18p-E1-8] Tantalum Oxide Resistance Change Memory Formed by Neutral Beam Technique

^○Takeo Ohno^1,2, Seiji Samukawa^1,3 (WPI-AIMR, Tohoku Univ.¹, JST-PRESTO², IFS, Tohoku Univ.³)

5:00 PM - 5:15 PM

▲ [18p-E1-9] Bio-based Nano-designing of Resistance Change Memory

^○Mutsunori Uenuma^1,2, Takahiko Ban^1,2, Naofumi Okamoto¹, Ichiro Yamashita^1,2, Yukiharu Uraoka^1,2 (NAIST¹, CREST²)

5:15 PM - 5:30 PM

▲ [18p-E1-10] Forming Characteristics of NiO-based Resistance Change Ramdom Access Memory

^○Yusuke Nishi¹, Hiroki Sasakura¹, Tatsuya Iwata¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹)

5:30 PM - 5:45 PM

▲ [18p-E1-11] Temperature Dependence of Resistance of Conductive Nano-filament Formed in Resistance Change Memory

^○（D）Shintaro Otsuka¹, Yoshifumi Hamada¹, Tomohiro Shimizu¹, Shoso Shingubara¹ (Kansai Univ.¹)

5:45 PM - 6:00 PM

▲ [18p-E1-12] Effect of lowering resistivity of an insulator on the I-V characteristics of In/Al2O3/Al ReRAM

^○Yusuke Tanimoto¹, Yoshihumi Hamada², Shintaro Otsuka², Tomohiro Shimizu², Shoso Shingubara², Tadataka Watanabe¹, Yoshiki Takano¹, Kouichi Takase¹ (Nihon Univ.¹, Kansai Univ.²)

6:00 PM - 6:15 PM

▲ [18p-E1-13] Characteristic Evaluation of P-type Metal-Oxide-Semiconductor/SiOx/n-SiC/n-Si Resistive Nonvolatile Memory

^○Atsushi Yamashita¹, Yoshihiko Sato¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (Tokyo Univ. of Agric. & Tech¹)

6:15 PM - 6:30 PM

▲ [18p-E1-14] Expectation to the future developments

^○Hiroshi Sakama¹ (Sophia Univ.¹)

Sessions

Symposium planned by Program Committee » Developments and Challenges for Resistance Change Memories Technology

[18a-E1-1~6] Developments and Challenges for Resistance Change Memories Technology

▲ [18a-E1-1] Prospect of resistance change memories for low power and ultra high density nonvolatile memories

▲ [18a-E1-2] Resistive Switching in Metal Oxides: Mechanisms and Applications

[18a-E1-3] Current Status of Mechanism Elucidation of Resistive Switching Effect in Resistive Random Access Memory (ReRAM)

▲ [18a-E1-4] Bipolar Resistive Switching Behaviors of Metal Oxide Single Crystals

▲ [18a-E1-5] Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

▲ [18a-E1-6] Switching Mechanism of Resistance Random Access Memory Based on the First-Principles Calculations

[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology

▲ [18p-E1-1] ReRAM/NAND Flash Memory Hybrid Memory System for Big Data Application

▲ [18p-E1-2] Observation of ReRAM switching by means of TEM/STM

▲ [18p-E1-3] Data Retention of TaO_x ReRAM in Low Current Operation and after Cycling

▲ [18p-E1-4] On the reliability of Metal Oxide RRAM

▲ [18p-E1-5] Atomic switch: Resistance change memory based on cation transport and redox reactions in oxide thin layers

▲ [18p-E1-6] 0.3V Programmable Logic using Complementary Atom Switch

▲ [18p-E1-7] Impact of oxidization, nitridation, and process temperature on materials for ReRAM

▲ [18p-E1-8] Tantalum Oxide Resistance Change Memory Formed by Neutral Beam Technique

▲ [18p-E1-9] Bio-based Nano-designing of Resistance Change Memory

▲ [18p-E1-10] Forming Characteristics of NiO-based Resistance Change Ramdom Access Memory

▲ [18p-E1-11] Temperature Dependence of Resistance of Conductive Nano-filament Formed in Resistance Change Memory

▲ [18p-E1-12] Effect of lowering resistivity of an insulator on the I-V characteristics of In/Al2O3/Al ReRAM

▲ [18p-E1-13] Characteristic Evaluation of P-type Metal-Oxide-Semiconductor/SiOx/n-SiC/n-Si Resistive Nonvolatile Memory

▲ [18p-E1-14] Expectation to the future developments

Sessions

Symposium planned by Program Committee » Developments and Challenges for Resistance Change Memories Technology

[18a-E1-1~6] Developments and Challenges for Resistance Change Memories Technology

▲ [18a-E1-1] Prospect of resistance change memories for low power and ultra high density nonvolatile memories

▲ [18a-E1-2] Resistive Switching in Metal Oxides: Mechanisms and Applications

[18a-E1-3] Current Status of Mechanism Elucidation of Resistive Switching Effect in Resistive Random Access Memory (ReRAM)

▲ [18a-E1-4] Bipolar Resistive Switching Behaviors of Metal Oxide Single Crystals

▲ [18a-E1-5] Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

▲ [18a-E1-6] Switching Mechanism of Resistance Random Access Memory Based on the First-Principles Calculations

[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology

▲ [18p-E1-1] ReRAM/NAND Flash Memory Hybrid Memory System for Big Data Application

▲ [18p-E1-2] Observation of ReRAM switching by means of TEM/STM

▲ [18p-E1-3] Data Retention of TaOx ReRAM in Low Current Operation and after Cycling

▲ [18p-E1-4] On the reliability of Metal Oxide RRAM

▲ [18p-E1-5] Atomic switch: Resistance change memory based on cation transport and redox reactions in oxide thin layers

▲ [18p-E1-6] 0.3V Programmable Logic using Complementary Atom Switch

▲ [18p-E1-7] Impact of oxidization, nitridation, and process temperature on materials for ReRAM

▲ [18p-E1-8] Tantalum Oxide Resistance Change Memory Formed by Neutral Beam Technique

▲ [18p-E1-9] Bio-based Nano-designing of Resistance Change Memory

▲ [18p-E1-10] Forming Characteristics of NiO-based Resistance Change Ramdom Access Memory

▲ [18p-E1-11] Temperature Dependence of Resistance of Conductive Nano-filament Formed in Resistance Change Memory

▲ [18p-E1-12] Effect of lowering resistivity of an insulator on the I-V characteristics of In/Al2O3/Al ReRAM

▲ [18p-E1-13] Characteristic Evaluation of P-type Metal-Oxide-Semiconductor/SiOx/n-SiC/n-Si Resistive Nonvolatile Memory

▲ [18p-E1-14] Expectation to the future developments

▲ [18p-E1-3] Data Retention of TaO_x ReRAM in Low Current Operation and after Cycling