^○谷本優輔¹，YoshihumiHamada²，ShintaroOtsuka²，TomohiroShimizu²，ShosoShingubara²，TadatakaWatanabe¹，YoshikiTakano¹，KouichiTakase¹ (Nihon Univ.¹，Kansai Univ.²)

18:00 〜 18:15

n-Si Resistive Nonvolatile Memory

^○Atsushi Yamashita，Yoshihiko Sato，Takahiro Tsukamoto，Yoshiyuki Suda (Tokyo Univ. of Agric. & Tech)

18:15 〜 18:30

▲ [18p-E1-14] Expectation to the future developments（15分）

^○坂間弘 (上智大理工)

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分科企画シンポジウム » Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

[18a-E1-1~6] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18a-E1-1] Prospect of resistance change memories for low power and ultra high density nonvolatile memories (15分)

▲ [18a-E1-2] Resistive Switching in Metal Oxides: Mechanisms and Applications（30分）

[18a-E1-3] 抵抗変化メモリ(ReRAM)におけるスイッチング機構解明の現状（30分）

▲ [18a-E1-4] Bipolar Resistive Switching Behaviors of Metal Oxide Single Crystals（30分）

▲ [18a-E1-5] Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM（30分）

▲ [18a-E1-6] Switching Mechanism of Resistance Random Access Memory Based on the First-Principles Calculations（15分）

[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18p-E1-1] ReRAM/NAND Flash Memory Hybrid Memory System for Big Data Application（30分）

▲ [18p-E1-2] Observation of ReRAM switching by means of TEM/STM (30 min.)

▲ [18p-E1-3] Data Retention of TaO_x ReRAM in Low Current Operation and after Cycling（30分）

▲ [18p-E1-4] On the reliability of Metal Oxide RRAM (30分)

▲ [18p-E1-5] Atomic switch: Resistance change memory based on cation transport and redox reactions in oxide thin layers (30分)

▲ [18p-E1-6] 0.3V Programmable Logic using Complementary Atom Switch

▲ [18p-E1-7] Impact of oxidization, nitridation, and process temperature on materials for ReRAM（30分）

▲ [18p-E1-8] Tantalum Oxide Resistance Change Memory Formed by Neutral Beam Technique

▲ [18p-E1-9] Bio-based Nano-designing of Resistance Change Memory

▲ [18p-E1-10] Forming Characteristics of NiO-based Resistance Change Ramdom Access Memory

▲ [18p-E1-11] Temperature Dependence of Resistance of Conductive Nano-filament Formed in Resistance Change Memory

▲ [18p-E1-12] Effect of lowering resistivity of an insulator on the I-V characteristics of In/Al2O3/Al ReRAM

▲ [18p-E1-13] Characteristic Evaluation of P-type Metal-Oxide-Semiconductor/SiOx/n-SiC/n-Si Resistive Nonvolatile Memory

▲ [18p-E1-14] Expectation to the future developments（15分）

セッション一覧

分科企画シンポジウム » Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

[18a-E1-1~6] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18a-E1-1] Prospect of resistance change memories for low power and ultra high density nonvolatile memories (15分)

▲ [18a-E1-2] Resistive Switching in Metal Oxides: Mechanisms and Applications（30分）

[18a-E1-3] 抵抗変化メモリ(ReRAM)におけるスイッチング機構解明の現状（30分）

▲ [18a-E1-4] Bipolar Resistive Switching Behaviors of Metal Oxide Single Crystals（30分）

▲ [18a-E1-5] Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM（30分）

▲ [18a-E1-6] Switching Mechanism of Resistance Random Access Memory Based on the First-Principles Calculations（15分）

[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18p-E1-1] ReRAM/NAND Flash Memory Hybrid Memory System for Big Data Application（30分）

▲ [18p-E1-2] Observation of ReRAM switching by means of TEM/STM (30 min.)

▲ [18p-E1-3] Data Retention of TaOx ReRAM in Low Current Operation and after Cycling（30分）

▲ [18p-E1-4] On the reliability of Metal Oxide RRAM (30分)

▲ [18p-E1-5] Atomic switch: Resistance change memory based on cation transport and redox reactions in oxide thin layers (30分)

▲ [18p-E1-6] 0.3V Programmable Logic using Complementary Atom Switch

▲ [18p-E1-7] Impact of oxidization, nitridation, and process temperature on materials for ReRAM（30分）

▲ [18p-E1-8] Tantalum Oxide Resistance Change Memory Formed by Neutral Beam Technique

▲ [18p-E1-9] Bio-based Nano-designing of Resistance Change Memory

▲ [18p-E1-10] Forming Characteristics of NiO-based Resistance Change Ramdom Access Memory

▲ [18p-E1-11] Temperature Dependence of Resistance of Conductive Nano-filament Formed in Resistance Change Memory

▲ [18p-E1-12] Effect of lowering resistivity of an insulator on the I-V characteristics of In/Al2O3/Al ReRAM

▲ [18p-E1-13] Characteristic Evaluation of P-type Metal-Oxide-Semiconductor/SiOx/n-SiC/n-Si Resistive Nonvolatile Memory

▲ [18p-E1-14] Expectation to the future developments（15分）

▲ [18p-E1-3] Data Retention of TaO_x ReRAM in Low Current Operation and after Cycling（30分）