Short Oral presentation

[17a-E7-40~56] 10.4 Semiconductors, organic, optical, and quantum spintronics

Mon. Mar 17, 2014 11:18 AM - 11:52 AM E7 (E201)

ポスター講演　1:30PM～3:30PM　PA（アリーナ）

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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11:18 AM - 11:20 AM

▲ [17a-E7-40] Epitaxial Growth and Characterization of n-type Magnetic Semiconductor (In,Co)As

^○Tu Nguyen¹, Duc Anh Le¹, Nam Hai Pham¹, Masaaki Tanaka¹ (Tokyo Univ.¹)

11:20 AM - 11:22 AM

▲ [17a-E7-41] Interplay between strain, quantum confinement, and ferromagnetism in strained ferromagnetic semiconductor (In,Fe)As

^○Daisuke Sasaki¹, Anh LeDuc¹, Hai PhamNam¹, Masaaki Tanaka¹ (Univ. Tokyo¹)

11:22 AM - 11:24 AM

▼ [17a-E7-42] Multiple reflection effect in the reflection MCD measurement of GaMnAs

^○Hiroshi Terada¹, Shinobu Ohya¹, Masaaki Tanaka¹ (The Univ. of Tokyo¹)

11:24 AM - 11:26 AM

▲ [17a-E7-43] Evaluation of spin property and magnetic field sensitivity of nitrogen-vacancy center in diamond using micropatterned substrate

^○Kazuki Kaneko¹, Tomohiro Gomi¹, Koji Fujisawa¹, Hideyuki Watanabe², Hitoshi Umezawa², Shinichi Shikata², Kohei M. Itoh¹, junko Ishi-Hayase¹ (Keio Univ.¹, AIST²)

11:26 AM - 11:28 AM

▲ [17a-E7-44] A lateral-configuration-type spin photodiode consisting of a ferromagnet-semiconductor junction

^○Hiroki Ikeda¹, Nozomi Nishizawa¹, Kazuhiro Nishibayashi¹, Hiro Munekata¹ (Imaging Sci. & Eng. Lab., Tokyo Inst. of Tech.¹)

11:28 AM - 11:30 AM

[17a-E7-45] Physical properties of (Ti,Co)O₂ films prepared on glass substrates

^○Yoshiharu Yamada¹ (tri-osaka¹)

11:30 AM - 11:32 AM

[17a-E7-46] STM observation of Cr impurity states in diluted magnetic semiconductor (Zn,Cr)Te

^○Taku Nishimura¹, Ken Kanazawa¹, Shoji Yoshida¹, Hidemi Shigekawa¹, Shinji Kuroda¹ (Grad. School of Pure & Appl. Sci., Univ. of Tsukuba¹)

11:32 AM - 11:34 AM

[17a-E7-47] Magnetic properties of thin films quaternary magnetic semiconductor (Zn,Cr,Fe)Te grown by MBE

^○Takeru Domon¹, satoshi Ishitsuka¹, Ryota Akiyama¹, Ken Kanazawa¹, Shinzi Kuroda¹ (Tsukuba Univ.¹, Tsukuba Univ.², Tsukuba Univ.³, Tsukuba Univ.⁴, Tsukuba Univ.⁵)

11:34 AM - 11:36 AM

△ [17a-E7-48] Observation of carrier and spin relaxation in low-temperature grown GaAs

^○（M1）Kazuki Honda¹, Mitsunori Uemura¹, Yuya Yasue¹, Lu Shulong², Dai Pan², Atsushi Tackeuchi¹ (Waseda Univ.¹, SINANO-CAS²)

11:36 AM - 11:38 AM

△ [17a-E7-49] Temperature dependence of spin relaxation time in InGaAsP

^○Ryo Harasawa¹, Naohiro Asaka¹, Naoki Yamamoto¹, Hao Wu¹, Shulong Lu², Lian Ji², Atsushi Tackeuchi¹ (Waseda Univ.¹, SINANO-CAS²)

11:38 AM - 11:40 AM

[17a-E7-50] Magnetovoltaic effect of highly Ce doped Si thin films II

^○Yusuke Miyata¹, Takeshi Yoshimura¹, Atshushi Ashida¹, Norifumi Fujimura¹ (Osaka Prefecture University¹)

11:40 AM - 11:42 AM

△ [17a-E7-51] Observation of Anomalous Nernst Effect in Ge_1-xMn_xTe Thin Films

^○Naofumi Sakata¹, Atsushi Kuwahara¹, Kensuke Nishimura¹, Kengo Kishimoto¹, Hironori Asada¹, Tsuyoshi Koyanagi¹ (Yamaguchi Univ.¹)

11:42 AM - 11:44 AM

▲ [17a-E7-52] Highly efficient detection of pure spin currents in n-Ge using L2₁-Co₂FeSi Heusler-compound electrodes

^○Yuichi Fujita¹, Kenji Kasahara¹, Shinya Yamada¹, Kentarou Sawano², Masanobu Miyao¹, Kohei Hamaya¹ (Kyushu Univ.¹, Tokyo City Univ.²)

11:44 AM - 11:46 AM

▼ [17a-E7-53] Comparison of the resonant tunneling spectroscopy results between GaAs:Be and GaMnAs

^○（DC）Iriya Muneta¹, Hiroshi Terada¹, Shinobu Ohya¹, Masaaki Tanaka¹ (The Univ. of Tokyo¹)

11:46 AM - 11:48 AM

▼ [17a-E7-54] Growth temperature dependence of the properties including the Fe-atom locations in ferromagnetic-semiconductor GeFe

^○（M2）Yuki Wakabayashi¹, Yoshisuke Ban¹, Shinobu Ohya¹, Masaaki Tanaka¹ (The University of Tokyo¹)

11:48 AM - 11:50 AM

▲ [17a-E7-55] Transport measurements toward gate-controlled transition between persistent and inverse persistent spin helix states

^○Kohei Yoshizumi¹, Atsuya Sasaki¹, Makoto Kohda¹, Junsaku Nitta¹ (Tohoku Univ.¹)

11:50 AM - 11:52 AM

▲ [17a-E7-56] All electrical determination of Rashba and Dresselhaus spin-orbit interactions in InGaAs narrow wires

^○Atsuya Sasaki¹, Yoji Kunihashi¹, Makoto Kohda¹, Tobias Bauernfeind², Tobias Dollinger², Klaus Richter², Junsaku Nitta¹ (Tohoku Univ.¹, Regensburg Univ.²)

Oral presentation

[19p-E7-5~21] 10.4 Semiconductors, organic, optical, and quantum spintronics

Wed. Mar 19, 2014 2:00 PM - 6:30 PM E7 (E201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

▲ [19p-E7-5] Photo-induced FMR in (Ga,Mn)As with long wavelength (λ > 820 nm) excitation

^○（P）Takashi Matsuda¹, Kazuhiro Nishibayashi¹, Hiro Munekata¹ (ISEL, Tokyo Inst. Tech.¹)

2:15 PM - 2:30 PM

▲ [19p-E7-6] Detection of photo-induced ferromagnetic resonance in Co/Pd multilayers with oblique incidence angles

^○Junichi Saeki¹, Kazuhiro Nishibayashi¹, Takashi Matsuda¹, Yoshitaka Kitamoto², Hiro Munekata¹ (Imaging Sci. & Eng. Lab., Tokyo Inst. Tech.¹, School of Interdisciplinary. Grad. Sci. & Eng., Tokyo Inst. Tech.²)

2:30 PM - 2:45 PM

▲ [19p-E7-7] Unveiling the Impurity Band Inducing Ferromagnetism in Magnetic Semiconductor (Ga,Mn)As

^○Masaki Kobayashi^1,2, Iriya Muneta¹, Yukiharu Takeda³, Yoshihisa Harada⁴, Atsushi Fujimori⁵, Juraj Krempasky², Thorsten Schmitt², Shinobu Ohya¹, Masaaki Tanaka¹, Masaharu Oshima¹, Vladimir Strocov² (Univ. of Tokyo¹, Swiss Light Source/PSI², JAEA/SPring-8³, Univ. of Tokyo⁴, Univ. of Tokyo⁵)

2:45 PM - 3:00 PM

▲ [19p-E7-8] Magnetic anisotropy and anisotropic magneto-resistance in non-magnetic III-V/GaMnAs superlattices depending on layer thickness and valence band offset

^○Daiki Nozaki¹, Tatsuya Horii¹, Shigeru Kaku¹, Junji Yoshino¹ (Tokyo Tech.¹)

3:00 PM - 3:15 PM

△ [19p-E7-9] Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

^○（M1）Daiki Maruo¹, Pham Namhai¹, Masaaki Tanaka¹ (The University of Tokyo¹)

3:15 PM - 3:30 PM

▲ [19p-E7-10] Continuous reddish-yellow visible-light emission at room temperature in Mn-doped Si surface light-emitting diodes

^○NamHai Pham¹, Daiki Maruo¹, DucAnh Le¹, Masaaki Tanaka¹ (Univ. Tokyo¹)

3:30 PM - 3:45 PM

[19p-E7-11] Optically detected magnetic resonance spectroscopy of diamond with a high density of nitrogen-vacancy centers

^○Yuichiro Matsuzaki¹, Takaaki Shimooka², Zhu Xiaobo¹, Amsuss Robert^1,3, Kousuke Kakuyanagi¹, Kae Nemoto⁴, Munro William¹, Kouichi Senba⁴, Norikazu Mizuochi², Shiro Saito¹ (NTT BRL¹, Osaka Univ.², TU Wien³, NII⁴)

3:45 PM - 4:00 PM

[19p-E7-12] Monte Carlo simulation of dynamics of optically-generated spins in persistent spin helix state

^○Yoji Kunihashi¹, Haruki Sanada¹, Hideki Gotoh¹, Koji Onomitsu¹, Makoto Kohda², Junsaku Nitta², Tetsuomi Sogawa¹ (NTT BRL¹, Tohoku Univ.²)

Break 16:00〜16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

▼ [19p-E7-13] Electric field effects on Li codoped (Ga,Mn)As

^○Shohei Miyakozawa¹, Lin Chen², Fumihiro Matsukura^2,3, Hideo Ohno^1,2,3 (FLT-RIEC, Tohoku univ.¹, WPI-AIMR, Tohoku univ.², CSIS, Tohoku univ.³)

4:30 PM - 4:45 PM

▼ [19p-E7-14] Electrical control of ferromagnetism in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

^○（D）Duc Anh Le¹, Nam Hai Pham¹, Yuichi Kasahara¹, Yoshihiro Iwasa¹, Masaaki Tanaka¹ (The University of Tokyo, Graduate School of Engineering¹)

4:45 PM - 5:00 PM

[19p-E7-15] Modulation of magnetism by external electric fields in ferromagnetic semiconductor (Zn,Cr)Te

^○Haruyoshi Oikawa¹, Ryouta Akiyama¹, Takashi Momose¹, Shinji Kuroda¹ (Grad. School of Pure & Appl. Sci., Univ. Tsukuba¹)

5:00 PM - 5:15 PM

△ [19p-E7-16] Improvement of double quantum well samples toward the realization of nonmagnetic semiconductor spin-filtering device

^○Takashi Yamashige¹, Shoichiro Yokota¹, Atsushi Sawada¹, Satofumi Souma², Yoshiaki Sekine³, Takaaki Koga¹ (GSIST Hokkaido Univ.¹, DEEE Kobe Univ.², NTT Basic Research Laboratories³)

5:15 PM - 5:30 PM

▲ [19p-E7-17] Detection of inter-subband carrier rearrangement by using a magnetic focusing technique

^○Takanori Okayasu¹, Makoto Kohda¹, Junsaku Nitta¹ (Tohoku universiry¹)

5:30 PM - 5:45 PM

▲ [19p-E7-18] Evidence of Filtering Effect in a Spin Interferece Device

Yu Iwasaki¹, SunWoo Kim¹, Yoshiaki Hashimoto¹, Yasuhiro Iye¹, ^○Shingo Katsumoto¹ (Inst. Sol. St. Phys., Univ. Tokyo¹)

5:45 PM - 6:00 PM

▲ [19p-E7-19] Spin Polarization in the Vicinity of Quantum Point Contacts : Detection with Side-Coupled Quantum Dots

SunWoo Kim¹, Yoshiaki Hashimoto¹, Yasuhiro Iye¹, ^○Shingo Katsumoto¹ (Inst. Sol. St. Phys., Univ. Tokyo¹)

6:00 PM - 6:15 PM

▲ [19p-E7-20] Spin injection into self-assembled semiconductor quantum dots via tunneling; dependence on excitation-spin density

Xiaojie Yang¹, Takafumi Yamamura¹, Takayuki Kiba¹, Junichi Takayama¹, Agus Subagyo¹, Kazuhisa Sueoka¹, ^○Akihiro Murayama¹ (Hokkaido Univ.¹)

6:15 PM - 6:30 PM

[19p-E7-21] Magnetovoltaic effect of highly Ce doped Si thin films I

^○Yusuke Miyata¹, Takesho Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (Osaka Prefecture University¹)

Sessions

10. Spintronics and Magnetics » 10.4 Semiconductors, organic, optical, and quantum spintronics

[17a-E7-40~56] 10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [17a-E7-40] Epitaxial Growth and Characterization of n-type Magnetic Semiconductor (In,Co)As

▲ [17a-E7-41] Interplay between strain, quantum confinement, and ferromagnetism in strained ferromagnetic semiconductor (In,Fe)As

▼ [17a-E7-42] Multiple reflection effect in the reflection MCD measurement of GaMnAs

▲ [17a-E7-43] Evaluation of spin property and magnetic field sensitivity of nitrogen-vacancy center in diamond using micropatterned substrate

▲ [17a-E7-44] A lateral-configuration-type spin photodiode consisting of a ferromagnet-semiconductor junction

[17a-E7-45] Physical properties of (Ti,Co)O₂ films prepared on glass substrates

[17a-E7-46] STM observation of Cr impurity states in diluted magnetic semiconductor (Zn,Cr)Te

[17a-E7-47] Magnetic properties of thin films quaternary magnetic semiconductor (Zn,Cr,Fe)Te grown by MBE

△ [17a-E7-48] Observation of carrier and spin relaxation in low-temperature grown GaAs

△ [17a-E7-49] Temperature dependence of spin relaxation time in InGaAsP

[17a-E7-50] Magnetovoltaic effect of highly Ce doped Si thin films II

△ [17a-E7-51] Observation of Anomalous Nernst Effect in Ge_1-xMn_xTe Thin Films

▲ [17a-E7-52] Highly efficient detection of pure spin currents in n-Ge using L2₁-Co₂FeSi Heusler-compound electrodes

▼ [17a-E7-53] Comparison of the resonant tunneling spectroscopy results between GaAs:Be and GaMnAs

▼ [17a-E7-54] Growth temperature dependence of the properties including the Fe-atom locations in ferromagnetic-semiconductor GeFe

▲ [17a-E7-55] Transport measurements toward gate-controlled transition between persistent and inverse persistent spin helix states

▲ [17a-E7-56] All electrical determination of Rashba and Dresselhaus spin-orbit interactions in InGaAs narrow wires

[19p-E7-5~21] 10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [19p-E7-5] Photo-induced FMR in (Ga,Mn)As with long wavelength (λ > 820 nm) excitation

▲ [19p-E7-6] Detection of photo-induced ferromagnetic resonance in Co/Pd multilayers with oblique incidence angles

▲ [19p-E7-7] Unveiling the Impurity Band Inducing Ferromagnetism in Magnetic Semiconductor (Ga,Mn)As

▲ [19p-E7-8] Magnetic anisotropy and anisotropic magneto-resistance in non-magnetic III-V/GaMnAs superlattices depending on layer thickness and valence band offset

△ [19p-E7-9] Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

▲ [19p-E7-10] Continuous reddish-yellow visible-light emission at room temperature in Mn-doped Si surface light-emitting diodes

[19p-E7-11] Optically detected magnetic resonance spectroscopy of diamond with a high density of nitrogen-vacancy centers

[19p-E7-12] Monte Carlo simulation of dynamics of optically-generated spins in persistent spin helix state

▼ [19p-E7-13] Electric field effects on Li codoped (Ga,Mn)As

▼ [19p-E7-14] Electrical control of ferromagnetism in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

[19p-E7-15] Modulation of magnetism by external electric fields in ferromagnetic semiconductor (Zn,Cr)Te

△ [19p-E7-16] Improvement of double quantum well samples toward the realization of nonmagnetic semiconductor spin-filtering device

▲ [19p-E7-17] Detection of inter-subband carrier rearrangement by using a magnetic focusing technique

▲ [19p-E7-18] Evidence of Filtering Effect in a Spin Interferece Device

▲ [19p-E7-19] Spin Polarization in the Vicinity of Quantum Point Contacts : Detection with Side-Coupled Quantum Dots

▲ [19p-E7-20] Spin injection into self-assembled semiconductor quantum dots via tunneling; dependence on excitation-spin density

[19p-E7-21] Magnetovoltaic effect of highly Ce doped Si thin films I

Sessions

10. Spintronics and Magnetics » 10.4 Semiconductors, organic, optical, and quantum spintronics

[17a-E7-40~56] 10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [17a-E7-40] Epitaxial Growth and Characterization of n-type Magnetic Semiconductor (In,Co)As

▲ [17a-E7-41] Interplay between strain, quantum confinement, and ferromagnetism in strained ferromagnetic semiconductor (In,Fe)As

▼ [17a-E7-42] Multiple reflection effect in the reflection MCD measurement of GaMnAs

▲ [17a-E7-43] Evaluation of spin property and magnetic field sensitivity of nitrogen-vacancy center in diamond using micropatterned substrate

▲ [17a-E7-44] A lateral-configuration-type spin photodiode consisting of a ferromagnet-semiconductor junction

△ [17a-E7-48] Observation of carrier and spin relaxation in low-temperature grown GaAs

△ [17a-E7-49] Temperature dependence of spin relaxation time in InGaAsP

△ [17a-E7-51] Observation of Anomalous Nernst Effect in Ge1-xMnxTe Thin Films

▲ [17a-E7-52] Highly efficient detection of pure spin currents in n-Ge using L21-Co2FeSi Heusler-compound electrodes

▼ [17a-E7-53] Comparison of the resonant tunneling spectroscopy results between GaAs:Be and GaMnAs

▼ [17a-E7-54] Growth temperature dependence of the properties including the Fe-atom locations in ferromagnetic-semiconductor GeFe

▲ [17a-E7-55] Transport measurements toward gate-controlled transition between persistent and inverse persistent spin helix states

▲ [17a-E7-56] All electrical determination of Rashba and Dresselhaus spin-orbit interactions in InGaAs narrow wires

[19p-E7-5~21] 10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [19p-E7-5] Photo-induced FMR in (Ga,Mn)As with long wavelength (λ > 820 nm) excitation

▲ [19p-E7-6] Detection of photo-induced ferromagnetic resonance in Co/Pd multilayers with oblique incidence angles

▲ [19p-E7-7] Unveiling the Impurity Band Inducing Ferromagnetism in Magnetic Semiconductor (Ga,Mn)As

▲ [19p-E7-8] Magnetic anisotropy and anisotropic magneto-resistance in non-magnetic III-V/GaMnAs superlattices depending on layer thickness and valence band offset

△ [19p-E7-9] Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

▲ [19p-E7-10] Continuous reddish-yellow visible-light emission at room temperature in Mn-doped Si surface light-emitting diodes

▼ [19p-E7-13] Electric field effects on Li codoped (Ga,Mn)As

▼ [19p-E7-14] Electrical control of ferromagnetism in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

△ [19p-E7-16] Improvement of double quantum well samples toward the realization of nonmagnetic semiconductor spin-filtering device

▲ [19p-E7-17] Detection of inter-subband carrier rearrangement by using a magnetic focusing technique

▲ [19p-E7-18] Evidence of Filtering Effect in a Spin Interferece Device

▲ [19p-E7-19] Spin Polarization in the Vicinity of Quantum Point Contacts : Detection with Side-Coupled Quantum Dots

▲ [19p-E7-20] Spin injection into self-assembled semiconductor quantum dots via tunneling; dependence on excitation-spin density

△ [17a-E7-51] Observation of Anomalous Nernst Effect in Ge_1-xMn_xTe Thin Films

▲ [17a-E7-52] Highly efficient detection of pure spin currents in n-Ge using L2₁-Co₂FeSi Heusler-compound electrodes