Short Oral presentation

[17a-E7-14~33] 10.2 Spin torque, spin current, circuits, and measurement technologies

Mon. Mar 17, 2014 10:26 AM - 11:06 AM E7 (E201)

ポスター講演　1:30PM～3:30PM　PA（アリーナ）

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:26 AM - 10:28 AM

▲ [17a-E7-14] Sub THz magnetization precession in Mn-based alloys thin films

^○Shigemi Mizukami¹, Satoshi Iihama², Atsushi Sugihara¹, Yasuo Ando², Terunobu Miyazaki¹ (WPI-AIMR, Tohoku Univ.¹, Tohoku Univ.²)

10:28 AM - 10:30 AM

▼ [17a-E7-15] Anomalous Nernst effect in Co-substituted Mn-Ga epitaxial thin films

^○Masaki Inoue¹, Masaki Mizuguchi¹, Tomoko Sugiyama¹, Koki Takanashi¹ (Tohoku Univ.¹)

10:30 AM - 10:32 AM

▲ [17a-E7-16] Anti-ferromagnetic Exchange Interaction of D0₂₂-Mn₇₀Ga₃₀/CoB Bilayer

^○Ranjbardizaj Reza^1,2, Shigemi Mizukami¹, Yasuo Ando², Xianmin Zhang¹, Qinli Ma¹, Atsushi Sugihara¹, Terunobu Miyazaki¹ (WPI-AIMR¹, Tohoku Univ.²)

10:32 AM - 10:34 AM

[17a-E7-17] Magnetization dynamics of L1₀-FePd thin films with different order parameter

^○Satoshi Iihama¹, Hiroshi Naganuma¹, Shigemi Mizukami², Terunobu Miyazaki², Mohammed Khan¹, Mikihiko Oogane¹, Yasuo Ando¹ (Tohoku Univ.¹, WPI-AIMR²)

10:34 AM - 10:36 AM

[17a-E7-18] Spatial Resolution and Switching Field of Magnetic Force Microscope Tip Coated with Fe/CoPt Magnetic Bi-Layer Film

^○Ryo Nagatsu¹, Shinji Ishihara¹, Mitsuru Ohtake¹, Masaaki Futamoto¹ (Chuo Univ.¹)

10:36 AM - 10:38 AM

▼ [17a-E7-19] Ta and CoFeB thickness dependence of sheet resistance in Ta/CoFeB/MgO heterostructures

^○Chaoliang Zhang¹, Michihiko Yamanouchi^1,2, Hideo Sato², Shunsuke Fukami², Shoji Ikeda^1,2, Fumihiro Matsukura^1,2,3, Hideo Ohno^1,2,3 (RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³)

10:38 AM - 10:40 AM

▲ [17a-E7-20] Influence of Nonmagnetic Materials Doping on Interfacial Magnetic Anisotropy and Damping in CoFeB/MgO Films

^○Mikihiko Oogane¹, Miho Watanabe¹, Hiroshi Naganuma¹, Yasuo Ando¹ (Tohoku Univ.¹)

10:40 AM - 10:42 AM

[17a-E7-21] Bias dependency of local spin signals in a spin transport device with Co2Fe(Al,Si)/n-GaAs junctions

^○（D）Tatsuya Saito¹, Nobuki Tezuka¹, Masashi Matsuura¹, Satoshi Sugimoto¹ (Tohoku Univ.¹)

10:42 AM - 10:44 AM

▼ [17a-E7-22] Analysis of Hanle-effect signals observed in a Si-channel spin-accumulation device with a high-quality CoFe/MgO/Si spin injector

^○Yota Takamura^1,2, Taiju Akushichi¹, Adiyuda Sadano¹, Yusuke Shuto¹, Satoshi Sugahara¹ (ISEL, Tokyo Tech¹, Dept. of Phys. Electron., Tokyo Tech²)

10:44 AM - 10:46 AM

▼ [17a-E7-23] Spin lifetime in strained InGaAs channels investigated in four-terminal nonlocal geometry

^○（DC）Takafumi Akiho¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (Graduate School of Information Science and Technology, Hokkaido Univ.¹)

10:46 AM - 10:48 AM

▲ [17a-E7-24] Crossover of three-terminal resistance from tunneling anisotropic magnetoresistance to tunneling anisotropic spin polarization

^○Junichi Shiogai¹, Mariusz Ciorga², Tsutomu Nojima³, Dieter Schuh², Makoto Kohda¹, Dominique Bougeard², Dieter Weiss², Junsaku Nitta¹ (Tohoku Univ.¹, Univ. of Regensburg², IMR, Tohoku Univ.³)

10:48 AM - 10:50 AM

▼ [17a-E7-25] Electronic conduction property on Nano-Contact Magnetoresistance

^○Yohei Shiokawa¹, Zhong Zheng¹, Yusuke Toda¹, Yoshimi Hisatsune², Masashi Sahashi¹ (Tohoku Univ.¹, Kyushu Univ.²)

10:50 AM - 10:52 AM

▲ [17a-E7-26] High sensitivity ferromagnetic resonance measurement using microwave interferometer

^○Shingo Tamaru¹, Hitoshi Kubota¹, Kay Yakushiji¹, Akio Fukushima¹, Sumito Tsunegi¹, Shinji Yuasa¹, Yoshiyuki Yanagimoto² (AIST¹, Agilent²)

10:52 AM - 10:54 AM

[17a-E7-27] Theory of spin torque resonance for magnetic insulators

^○（M2）Takahiro Chiba¹, Gerrit Bauer^1,2,3, Saburo Takahashi¹ (IMR, Tohoku University¹, WPI AIMR², Kavli Institute of NanoScience, TU Delft³)

10:54 AM - 10:56 AM

[17a-E7-28] Measurement of Nonreciprocity of magnetostatic-surface-wave by using Network Analyzer

^○Kazuto Yamanoi¹, Akira Yamamoto¹, Shinya Kasai², Seiji Mitani², Takashi Manago¹ (Fukuoka Univ.¹, NIMS²)

10:56 AM - 10:58 AM

[17a-E7-29] Spin Hall magnetoresistance and spin pumping in a trilayer with magnetic insulators

^○Saburo Takahashi¹, Takahiro Chiba¹, Yan-Ting Chen², Gerrit Bauer^1,2,3 (IMR, Tohoku Univ.¹, KISN, TU Delft², WPI-AIMR³)

10:58 AM - 11:00 AM

▲ [17a-E7-30] Nonlinear Effect of Spin Pumping in Microfabricated Devices with Permalloy/Pt

^○Tatsuya Yamamoto¹, Takeshi Seki¹, Koki Takanashi¹ (IMR, Tohoku Univ.¹)

11:00 AM - 11:02 AM

[17a-E7-31] Observation of spin-charge conversion in magnetic insulator

^○Tatsuro Yoshino¹, Kyohei Takamura¹, Eiji Saitoh^1,2,3 (IMR, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², ASRC, JAEA³)

11:02 AM - 11:04 AM

△ [17a-E7-32] A Metallic Complex Reaction Etching of Transition Metal by Low-temperature and Damage-free Neutral Beam Process

^○Xun Gu¹, Yoshiyuki Kikuchi^1,2, Toshihisa Nozawa¹, Seiji Samukawa² (Tokyo Electron Limited¹, Tohoku Univ.²)

11:04 AM - 11:06 AM

[17a-E7-33] The comparison of performance and energy of fast STT-MRAM and SRAM

^○Shogo Itai¹, Hiroki Noguchi¹, Shinobu Fujita¹ (Toshiba¹)

Oral presentation

[19a-E7-1~11] 10.2 Spin torque, spin current, circuits, and measurement technologies

Wed. Mar 19, 2014 9:00 AM - 12:00 PM E7 (E201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▼ [19a-E7-1] Size dependence of critical current and thermal stability of domain wall motion device

^○Shunsuke Fukami¹, Michihiko Yamanouchi^1,2, Shoji Ikeda^1,2, Hideo Ohno^1,2,3 (CSIS, Tohoku Univ.¹, RIEC, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³)

9:15 AM - 9:30 AM

▼ [19a-E7-2] Current induced domain wall creep in Ta/CoFeB/MgO/Ta wire

^○Samik DuttaGupta¹, Shunsuke Fukami², Michihiko Yamanouchi^{1, 2}, Chaoliang Zhang¹, Hideo Sato², Shoji Ikeda^{1, 2}, Fumihiro Matsukura^{1, 2, 3}, Hideo Ohno^{1, 2, 3} (RIEC, Tohoku Univ¹, CSIS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³)

9:30 AM - 9:45 AM

▲ [19a-E7-3] Spin wave induced domain wall motion in perpendicularly magnetized system

^○Hiroshi Hata¹, Takuya Taniguchi¹, Hyun-Woo Lee², Takahiro Moriyama¹, Teruo Ono¹ (Kyoto Univ.¹, POSTECH²)

9:45 AM - 10:00 AM

▲ [19a-E7-4] Reduction of Schottky Barrier Height for Fe/n-type Ge Junction by Inserting a Thin GeO₂ Layer

^○Hidekazu Saito¹, Yuki Sato^1,2, Tetsuro Takada^1,2, Jansen Ron¹, Shinji Yuasa¹, Koji Ando¹ (AIST¹, Meiji Univ.²)

10:00 AM - 10:15 AM

[19a-E7-5] Bias voltage dependence on spin accumulation signals in L2₁-Co₂FeSi/MgO/n⁺-Si on insulator devices

^○Mizue Ishikawa¹, Hideyuki Sugiyama¹, Tomoaki Inokuchi¹, Tetsufumi Tanamoto¹, Kohei Hamaya², Nobuki Tezuka³, Yoshiaki Saito¹ (Toshiba-Corporate R&D Center¹, Department of Electronics, Kyushu Univ.², Department of Material Science, Tohoku Univ.³)

10:15 AM - 10:30 AM

▼ [19a-E7-6] CoFe thickness dependence of spin injection properties for Co₂MnSi/CoFe/n-GaAs junctions

^○Yuya Ebina¹, Takafumi Akiho¹, Hong-xi Liu¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (Hokkaido Univ.¹)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

▲ [19a-E7-7] Magneto-transport properties of Co₂FeGa_0.5Ge_0.5/Cu lateral spin valve devices

^○（D）Ikhtiar Ikhtiar^1,3, Sinya Kasai³, Akihide Itoh^2,3, Yukiko Takahashi³, Tadakatsu Ohkubo^2,3, Seiji Mitani^1,3, Kazuhiro Hono^1,3 (Tsukuba University¹, Tokyo University of Science², National Institute for Materials Science³)

11:00 AM - 11:15 AM

[19a-E7-8] Structural characterization of Co₂FeGa_0.5Ge_0.5/Cu non-local lateral spin valve devices

^○Akihide Itoh^1,3, Ikhtiar Ikhtiar^2,3, Tadakatsu Ohkubo^1,3, Sinya Kasai³, Yukiko Takahashi³, Seiji Mitani^2,3, Kazuhiro Hono^2,3 (Tokyo University of Science¹, University of Tsukuba², National Institute for Material Science³)

11:15 AM - 11:30 AM

▼ [19a-E7-9] Origin of enhancement of the spin detection sensitivity in a spin Esaki diode structure

11:30 AM - 11:45 AM

▲ [19a-E7-10] High Power Spin Torque Oscillation in a Co₂(Fe,Mn)Si Layer

^○Takeshi Seki¹, Yuya Sakuraba¹, Hiroko Arai², Masaki Ueda¹, Ryo Okura¹, Hiroshi Imamura², Koki Takanashi¹ (IMR, Tohoku Univ.¹, AIST²)

11:45 AM - 12:00 PM

▲ [19a-E7-11] Spectral narrowing in a coupled system of a spin-torque oscillator and a nanomagnet

^○Kiwamu Kudo¹, Hirofumi Suto¹, Tazumi Nagasawa¹, Koichi Mizushima¹, Rie Sato¹ (Toshiba¹)

Oral presentation

[19p-E7-1~4] 10.2 Spin torque, spin current, circuits, and measurement technologies

Wed. Mar 19, 2014 1:00 PM - 2:00 PM E7 (E201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00〜13:00 （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[19p-E7-1] Real-time measurement of electric field-induced magnetization dynamics

^○Shun Kanai¹, Yoshinobu Nakatani², Michihiko Yamanouchi^1,3, Shoji Ikeda^1,3, Fumihiro Matsukura^3,4, Hideo Ohno^1,3,4 (LNS-RIEC, Tohoku Univ.¹, The Univ. of Electro-Communications², CSIS, Tohoku Univ.³, WPI-AIMR, Tohoku Univ.⁴)

1:15 PM - 1:30 PM

▼ [19p-E7-2] Ferromagnetic resonance spectra of CoFeB-MgO magnetic tunnel junctions measured by homodyne detection

^○Eriko Hirayama¹, Shun Kanai¹, Koji Sato², Michihiko Yamanouchi^1,3, Hideo Sato³, Shoji Ikeda^1,3, Fumihiro Matukura^2,3, Hideo Ohno^1,2,3 (Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², CSIS, Tohoku Univ.³)

1:30 PM - 1:45 PM

▲ [19p-E7-3] Spin Seebeck effect and Onsager reciprocity

^○Gerrit Bauer¹ (IMR Tohoku University¹)

1:45 PM - 2:00 PM

▲ [19p-E7-4] Observation of Spin Seebeck Effect at Low Temperature

^○Junya Yamagami¹, Shigeru Kaku¹, Junji Yoshino¹ (Dept. of Phys., Tokyo Tech.¹)

Sessions

10. Spintronics and Magnetics » 10.2 Spin torque, spin current, circuits, and measurement technologies

[17a-E7-14~33] 10.2 Spin torque, spin current, circuits, and measurement technologies

▲ [17a-E7-14] Sub THz magnetization precession in Mn-based alloys thin films

▼ [17a-E7-15] Anomalous Nernst effect in Co-substituted Mn-Ga epitaxial thin films

▲ [17a-E7-16] Anti-ferromagnetic Exchange Interaction of D0₂₂-Mn₇₀Ga₃₀/CoB Bilayer

[17a-E7-17] Magnetization dynamics of L1₀-FePd thin films with different order parameter

[17a-E7-18] Spatial Resolution and Switching Field of Magnetic Force Microscope Tip Coated with Fe/CoPt Magnetic Bi-Layer Film

▼ [17a-E7-19] Ta and CoFeB thickness dependence of sheet resistance in Ta/CoFeB/MgO heterostructures

▲ [17a-E7-20] Influence of Nonmagnetic Materials Doping on Interfacial Magnetic Anisotropy and Damping in CoFeB/MgO Films

[17a-E7-21] Bias dependency of local spin signals in a spin transport device with Co2Fe(Al,Si)/n-GaAs junctions

▼ [17a-E7-22] Analysis of Hanle-effect signals observed in a Si-channel spin-accumulation device with a high-quality CoFe/MgO/Si spin injector

▼ [17a-E7-23] Spin lifetime in strained InGaAs channels investigated in four-terminal nonlocal geometry

▲ [17a-E7-24] Crossover of three-terminal resistance from tunneling anisotropic magnetoresistance to tunneling anisotropic spin polarization

▼ [17a-E7-25] Electronic conduction property on Nano-Contact Magnetoresistance

▲ [17a-E7-26] High sensitivity ferromagnetic resonance measurement using microwave interferometer

[17a-E7-27] Theory of spin torque resonance for magnetic insulators

[17a-E7-28] Measurement of Nonreciprocity of magnetostatic-surface-wave by using Network Analyzer

[17a-E7-29] Spin Hall magnetoresistance and spin pumping in a trilayer with magnetic insulators

▲ [17a-E7-30] Nonlinear Effect of Spin Pumping in Microfabricated Devices with Permalloy/Pt

[17a-E7-31] Observation of spin-charge conversion in magnetic insulator

△ [17a-E7-32] A Metallic Complex Reaction Etching of Transition Metal by Low-temperature and Damage-free Neutral Beam Process

[17a-E7-33] The comparison of performance and energy of fast STT-MRAM and SRAM

[19a-E7-1~11] 10.2 Spin torque, spin current, circuits, and measurement technologies

▼ [19a-E7-1] Size dependence of critical current and thermal stability of domain wall motion device

▼ [19a-E7-2] Current induced domain wall creep in Ta/CoFeB/MgO/Ta wire

▲ [19a-E7-3] Spin wave induced domain wall motion in perpendicularly magnetized system

▲ [19a-E7-4] Reduction of Schottky Barrier Height for Fe/n-type Ge Junction by Inserting a Thin GeO₂ Layer

[19a-E7-5] Bias voltage dependence on spin accumulation signals in L2₁-Co₂FeSi/MgO/n⁺-Si on insulator devices

▼ [19a-E7-6] CoFe thickness dependence of spin injection properties for Co₂MnSi/CoFe/n-GaAs junctions

▲ [19a-E7-7] Magneto-transport properties of Co₂FeGa_0.5Ge_0.5/Cu lateral spin valve devices

[19a-E7-8] Structural characterization of Co₂FeGa_0.5Ge_0.5/Cu non-local lateral spin valve devices

▼ [19a-E7-9] Origin of enhancement of the spin detection sensitivity in a spin Esaki diode structure

▲ [19a-E7-10] High Power Spin Torque Oscillation in a Co₂(Fe,Mn)Si Layer

▲ [19a-E7-11] Spectral narrowing in a coupled system of a spin-torque oscillator and a nanomagnet

[19p-E7-1~4] 10.2 Spin torque, spin current, circuits, and measurement technologies

[19p-E7-1] Real-time measurement of electric field-induced magnetization dynamics

▼ [19p-E7-2] Ferromagnetic resonance spectra of CoFeB-MgO magnetic tunnel junctions measured by homodyne detection

▲ [19p-E7-3] Spin Seebeck effect and Onsager reciprocity

▲ [19p-E7-4] Observation of Spin Seebeck Effect at Low Temperature

Sessions

10. Spintronics and Magnetics » 10.2 Spin torque, spin current, circuits, and measurement technologies

[17a-E7-14~33] 10.2 Spin torque, spin current, circuits, and measurement technologies

▲ [17a-E7-14] Sub THz magnetization precession in Mn-based alloys thin films

▼ [17a-E7-15] Anomalous Nernst effect in Co-substituted Mn-Ga epitaxial thin films

▲ [17a-E7-16] Anti-ferromagnetic Exchange Interaction of D022-Mn70Ga30/CoB Bilayer

▼ [17a-E7-19] Ta and CoFeB thickness dependence of sheet resistance in Ta/CoFeB/MgO heterostructures

▲ [17a-E7-20] Influence of Nonmagnetic Materials Doping on Interfacial Magnetic Anisotropy and Damping in CoFeB/MgO Films

▼ [17a-E7-22] Analysis of Hanle-effect signals observed in a Si-channel spin-accumulation device with a high-quality CoFe/MgO/Si spin injector

▼ [17a-E7-23] Spin lifetime in strained InGaAs channels investigated in four-terminal nonlocal geometry

▲ [17a-E7-24] Crossover of three-terminal resistance from tunneling anisotropic magnetoresistance to tunneling anisotropic spin polarization

▼ [17a-E7-25] Electronic conduction property on Nano-Contact Magnetoresistance

▲ [17a-E7-26] High sensitivity ferromagnetic resonance measurement using microwave interferometer

▲ [17a-E7-30] Nonlinear Effect of Spin Pumping in Microfabricated Devices with Permalloy/Pt

△ [17a-E7-32] A Metallic Complex Reaction Etching of Transition Metal by Low-temperature and Damage-free Neutral Beam Process

[19a-E7-1~11] 10.2 Spin torque, spin current, circuits, and measurement technologies

▼ [19a-E7-1] Size dependence of critical current and thermal stability of domain wall motion device

▼ [19a-E7-2] Current induced domain wall creep in Ta/CoFeB/MgO/Ta wire

▲ [19a-E7-3] Spin wave induced domain wall motion in perpendicularly magnetized system

▲ [19a-E7-4] Reduction of Schottky Barrier Height for Fe/n-type Ge Junction by Inserting a Thin GeO2 Layer

▼ [19a-E7-6] CoFe thickness dependence of spin injection properties for Co2MnSi/CoFe/n-GaAs junctions

▲ [19a-E7-7] Magneto-transport properties of Co2FeGa0.5Ge0.5/Cu lateral spin valve devices

▼ [19a-E7-9] Origin of enhancement of the spin detection sensitivity in a spin Esaki diode structure

▲ [19a-E7-10] High Power Spin Torque Oscillation in a Co2(Fe,Mn)Si Layer

▲ [19a-E7-11] Spectral narrowing in a coupled system of a spin-torque oscillator and a nanomagnet

[19p-E7-1~4] 10.2 Spin torque, spin current, circuits, and measurement technologies

▼ [19p-E7-2] Ferromagnetic resonance spectra of CoFeB-MgO magnetic tunnel junctions measured by homodyne detection

▲ [19p-E7-3] Spin Seebeck effect and Onsager reciprocity

▲ [19p-E7-4] Observation of Spin Seebeck Effect at Low Temperature

▲ [17a-E7-16] Anti-ferromagnetic Exchange Interaction of D0₂₂-Mn₇₀Ga₃₀/CoB Bilayer

▲ [19a-E7-4] Reduction of Schottky Barrier Height for Fe/n-type Ge Junction by Inserting a Thin GeO₂ Layer

▼ [19a-E7-6] CoFe thickness dependence of spin injection properties for Co₂MnSi/CoFe/n-GaAs junctions

▲ [19a-E7-7] Magneto-transport properties of Co₂FeGa_0.5Ge_0.5/Cu lateral spin valve devices

▲ [19a-E7-10] High Power Spin Torque Oscillation in a Co₂(Fe,Mn)Si Layer