The 61st JSAP Spring Meeting, 2014

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15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[17a-E11-6~10] 15.3 III-V-group epitaxial crystals

Mon. Mar 17, 2014 10:30 AM - 11:45 AM E11 (E205)

11:30 AM - 11:45 AM

[17a-E11-10] Strained InGaP/InGaP MQW grown on misoriented GaAs (100) substrate by MOMBE

○Manabu Mitsuhara1, Noriyuki Watanabe1, Haruki Yokoyama1, Naoteru Shigekawa2 (NTT Photonics Labs.1, Osaka City Univ.2)

Keywords:InGaP,MQW,Epitaxy