Influence of Cap-Si thickness on Interface State Density and Hole Mobility of p-MOSFETs with Cap-Si/Strained-SiGe Channel/Si(110) Heterostructures

Presentation information

Poster presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

Mon. Mar 17, 2014 9:30 AM - 11:30 AM PG2 (G棟2階)

9:30 AM - 11:30 AM

^○Tomoyuki Obata¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Kentaro Sawano² (CCST Univ. of Yamanashi¹, ARL Tokyo City Univ²)

Keywords:圧縮歪みSiGe,Cap-Si,MOSFET