[18a-D8-1~12] 13.2 Insulator technology

[18a-D8-12] Mechanism of Dipole Layer Formation at High-k/SiO2 Interface: Multipole-induced Oxygen Migration Model

^○Shimura Kosuke¹, Ryo Kuriyama¹, Masahiro Hashiguchi¹, Ryusuke Takahashi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ.¹, Waseda-INN², Meiji Univ.³, University of Hyogo⁴, JST-CREST⁵)

Keywords:ダイポール