Diffusion-reaction mechanisms of nitriding species (NHx) in SiO2, Si3N4 and Si

Yasushi Nakasaki

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Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[18a-D8-1~12] 13.2 Insulator technology

Tue. Mar 18, 2014 9:00 AM - 12:15 PM D8 (D215)

10:00 AM - 10:15 AM

[18a-D8-5] Diffusion-reaction mechanisms of nitriding species (NH_x) in SiO₂, Si₃N₄ and Si

^○Yasushi Nakasaki¹, Izumi Hirano¹, Masayasu Miyata¹, Koichi Kato¹, Yuuichiro Mitani¹, Hiroki Yamashita², Hiroshi Akahori² (Toshiba Corp. R&D Center¹, Toshiba S&S Products Company²)

Keywords:シリコン窒化膜,シリコン酸化膜,窒化種

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Presentation information

[18a-D8-1~12] 13.2 Insulator technology

[18a-D8-5] Diffusion-reaction mechanisms of nitriding species (NHx) in SiO2, Si3N4 and Si

[18a-D8-5] Diffusion-reaction mechanisms of nitriding species (NH_x) in SiO₂, Si₃N₄ and Si