Session information

Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[18a-D8-1~12] 13.2 Insulator technology

Tue. Mar 18, 2014 9:00 AM - 12:15 PM D8 (D215)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

△ [18a-D8-1] Control of dielectric constant of Diamond-Like Carbon Films grown by Photoemission-Assisted Plasma-Enhanced CVD: From Low-k to High-k

^○（M1）Hiroyuki Hayashi¹, Susumu Takabayashi², Meng Yang¹, Shuichi Ogawa¹, Taiichi Otsuji², Yuji Takakuwa¹ (IMRAM, Tohoku Univ.¹, RIEC, Tohoku Univ.²)

9:15 AM - 9:30 AM

△ [18a-D8-2] Evaluation of short range order in SiO2 thin-film by grazing-incidence wide and small-angle X-ray scattering

^○Kohki Nagata^1,4, Hiroki Tokutake¹, Masaya Nagasaka¹, Atsushi Ogura¹, Ichiro Hirosawa², Tomoyuki Suwa³, Akinobu Teramoto³, Takeo Hattori³, Tadahiro Ohmi³ (Meiji Univ.¹, JASRI², Tohoku Univ.³, JSPS Research fellow⁴)

9:30 AM - 9:45 AM

[18a-D8-3] Silicon oxide film was formed with mixed silicone-oil and ozone gas at low-temperature

^○Takuya Ito¹, Kensuke Nishioka¹ (Miyazaki Univ.¹)

9:45 AM - 10:00 AM

△ [18a-D8-4] Detailed study of the relationship between SiO2 degradation and hydrogen movement using nuclear reaction analysis

^○Yusuke Higashi¹, Riichiro Takaishi¹, Masamichi Suzuki¹, Koichi Kato¹, Mitsuhiro Tomita¹, Yuichiro Mitani¹, Masuaki Matsumoto², Shohei Ogura², Katsuyuki Fukutani² (Toshiba Corp.¹, Tokyo Univ.²)

10:00 AM - 10:15 AM

[18a-D8-5] Diffusion-reaction mechanisms of nitriding species (NH_x) in SiO₂, Si₃N₄ and Si

^○Yasushi Nakasaki¹, Izumi Hirano¹, Masayasu Miyata¹, Koichi Kato¹, Yuuichiro Mitani¹, Hiroki Yamashita², Hiroshi Akahori² (Toshiba Corp. R&D Center¹, Toshiba S&S Products Company²)

10:15 AM - 10:30 AM

▲ [18a-D8-6] Effects of biaxially-tensile strain on properties of Si/SiO2 interface states generated by electrical stress

^○Weili Cai^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Tokyo Univ.¹, JST CREST²)

Break 10:30〜10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[18a-D8-7] Investigation on the mechanism for data retention in MONOS memories with changing Si content in charge trap SiN layer

^○Shosuke Fujii¹, Naoki Yasuda¹ (Toshiba¹)

11:00 AM - 11:15 AM

△ [18a-D8-8] A guideline for SiN design for the improvement of both erase and retention performances in MONOS memories

^○Shosuke Fujii¹, Naoki Yasuda¹ (Toshiba¹)

11:15 AM - 11:30 AM

[18a-D8-9] Influence of the Work Function of Metal Gate Electrodes on UV-Light-Induced Conduction Currents through Silicon Nitride Films

^○（M1）Aran Suzuki¹, Kiyoteru Kobayashi¹ (Tokai Univ.¹)

11:30 AM - 11:45 AM

[18a-D8-10] High-temperature memory retention properties of Al/Al₂O₃/Al-rich Al-O/SiO₂/p-Si gate structure

^○Shinya Ozaki¹, Takeshi Kawae², Akiharu Morimoto² (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, College of Sci. & Eng. Kanazawa Univ.²)

11:45 AM - 12:00 PM

▲ [18a-D8-11] Effects of Annealing Ambient on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

^○（M2）Nithi Atthi¹, Dae-Hee Han¹, Shun-ichiro Ohmi¹ (Tokyo Institute of Technology¹)

12:00 PM - 12:15 PM

[18a-D8-12] Mechanism of Dipole Layer Formation at High-k/SiO2 Interface: Multipole-induced Oxygen Migration Model

^○Shimura Kosuke¹, Ryo Kuriyama¹, Masahiro Hashiguchi¹, Ryusuke Takahashi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ.¹, Waseda-INN², Meiji Univ.³, University of Hyogo⁴, JST-CREST⁵)

▲