The 61st JSAP Spring Meeting, 2014

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15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-E13-1~11] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 9:00 AM - 12:00 PM E13 (E301)

9:45 AM - 10:00 AM

[18a-E13-4] Nitride LEDs prepared on amorphous substrates with graphene buffer layers

JohnWoo Shon1, ○Jitsuo Ohta1, Kohei Ueno1, Hiroshi Fujioka1,2 (The Univ. of Tokyo1, JST-CREST2)

Keywords:GaN,グラフェン