[18p-D6-1~19] 6.2 Carbon-based thin films

△ [18p-D6-10] Enhancing breakdown voltage of ALD-Al2O3 hydrogen-terminated diamond MOSFETs

^○Tetsuya Yamada¹, Tomoya Naruo¹, Hidetoshi Tsuboi¹, Dechen Xu¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

Keywords:ダイヤモンド,MOSFET,絶縁破壊