Oral presentation

[17a-D6-1~11] 6.2 Carbon-based thin films

Mon. Mar 17, 2014 9:30 AM - 12:30 PM D6 (D209)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[17a-D6-1] Deposition of amorphous isotopic carbon films using physical vapor deposition

^○Yutaro Suzuki¹, Ryo Fujii¹, Naoto Ohtake¹, Hiroki Akasaka¹ (Tokyo Inst. of Tech.¹)

9:45 AM - 10:00 AM

[17a-D6-2] Oxygen analysis of amorphous carbon films with benzene by PECVD

^○Xiaolong Zhou¹, Keiji Komatsu¹, Ikumi Toda¹, Shigeo Ohshio¹, Hiroyuki Muramatsu¹, Haruhiko Ito¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

10:00 AM - 10:15 AM

△ [17a-D6-3] Structural change of hydrogenated amorphous carbon films using rf plasma CVD with application of pulsed bias voltage

^○Xiaolong Zhou¹, Keiji Komatsu¹, Ikumi Toda¹, Shigeo Ohshio¹, Hiroyuki Muratsu¹, Haruhiko Ito¹, Hidetoshi Saitoh¹ (Nagaoka Nniv. Tech.¹)

10:15 AM - 10:30 AM

[17a-D6-4] Quantification of hydrogen in DLC with glow discharge optical emission spectroscopy

^○Hikari Takahara^1,2, Ryoya Ishigami³, Kenji Kodama¹, Atsushi Kojyo¹, Keisuke Yasuda³, Tatsuya Nakamura², Yoshihiro Oka² (Rigaku. Corp.¹, University of Hyogo², WERC³)

10:30 AM - 10:45 AM

[17a-D6-5] Impedance frequency characteristic of amorphous carbon film having different optical properties

Hisashi Yoshioka¹, Xiaolong Zhou¹, Yasuyuki Nakaya¹, Satoru Arakawa¹, Shigeo Ohshio¹, Keiji Komatsu¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, ^○Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

Break 10:45〜11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[17a-D6-6] Alkali resistance of hydrogenated amorphous carbon films synthesized by electron cyclotron resonance-chemical vapor deposition method

Yasushi Sasaki¹, ^○Yasuyuki Nakaya¹, Shigeo Ohshio¹, Keiji Komatsu¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ.Tech.¹)

11:15 AM - 11:30 AM

[17a-D6-7] Acid resistance of hydrogenated amorphous carbon films under bias voltage evaluated by surface plasmon resonance phenomenon

^○Yasuyuki Nakaya¹, Keiji Komatsu¹, Ikumi Toda¹, Shigeo Ohshio¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

11:30 AM - 11:45 AM

[17a-D6-8] Raman characterization and mechanical properties of a-C:H films deposited by rf-PECVD

^○Tunmee Sarayut¹, Yasuyuki Nakaya¹, Xiaolong Zhou¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

11:45 AM - 12:00 PM

△ [17a-D6-9] The change of refractive index and extinction coefficient of hydrogenated DLC films by the soft X-ray irradiation

^○Ryo Imai¹, Kengo Kidena¹, Akihiro Fujimoto², Noriaki Toyoda², Kazuhiro Kanda¹ (LASTI, Univ. of Hyogo¹, Grad. School of eng., Univ. of Hyogo²)

12:00 PM - 12:15 PM

[17a-D6-10] Evaluation of Adhesion Properties of Hard Carbon Coating with Friction Test

^○Tsuguyori Ohana¹, Hiroki Mano¹, Takako Nakamura¹ (AIST¹)

12:15 PM - 12:30 PM

▲ [17a-D6-11] All carbon solarcell by microwave surface wave plasma CVD

^○Dilip Chandra Ghimire¹, Sudip Adhikari¹, Susumu Ichimura¹, Hideo Uchida¹, Koichi Wakita¹, Masayoshi Umeno¹ (Electrical and Electronics¹)

Oral presentation

[17p-D6-1~11] 6.2 Carbon-based thin films

Mon. Mar 17, 2014 2:00 PM - 5:15 PM D6 (D209)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30〜14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

[17p-D6-1] Biocompatibility of plasma treated DLC film coating on honeycomb scaffold

^○（B）Yasufumi Mabuchi¹, Haruna Tada¹, Kenji Arai¹, Yasuharu Ohgoe¹, Kenji Hirakuri¹, Naoki Fukata², Kazuhide Ozeki³ (Touden Univ.¹, NIMS², Ibaraki Univ.³)

2:15 PM - 2:30 PM

[17p-D6-2] Effects of heat treatment on iodine incorporated amorphous carbon films

^○Setsuo Nakao¹, Takashi Matsufuji², Naoki Kishi², Tetsuo Soga², Akihiro Matsumoto¹ (AIST¹, NIT²)

2:30 PM - 2:45 PM

[17p-D6-3] Characterization of a-C:Si:H Thin Films Fabricated by Low-energy Electron Beam Irradiation on Solid Thin Films formed from Hydrocarbon and Tetramethylsilane at Cryogenic Temperature

^○Ryutaro Yamada¹, Keita Seki¹, Nao Sakamaki¹, Naoki Kobayashi¹, Testuya Sato¹, Kiyokazu Nakagawa¹ (Univ. of Yamanashi¹)

2:45 PM - 3:00 PM

△ [17p-D6-4] Influence of thermal history on the electrical conductivity of amorphous carbon nitride films

^○Naoyuki Tamura¹, Masami Aono¹, Tomo Harata¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (NDA¹)

3:00 PM - 3:15 PM

△ [17p-D6-5] Dependence of photo-response of a-CN_x films on deposition temperature

^○Tomo Harata¹, Masami Aono¹, Naoyuki Tamura¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (NDA¹)

3:15 PM - 3:30 PM

[17p-D6-6] Double-layer a-CNx:H Film Deposition for Field Emission Using Supermagnetron Plasma

^○Haruhisa Kinoshita¹, Ryouhei Taguchi¹ (Shizuoka Univ., Grad. Sch. Eng.¹)

Break 15:30〜15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:15 PM

[17p-D6-7] [INVITED]”Spectroscopy and Thin Films” - Toward the Design of Carbon-related Films Based on the Plasma Spectroscopy

^○Haruhiko Ito¹ (Nagaoka Univ. of Tech.¹)

4:15 PM - 4:30 PM

△ [17p-D6-8] In situ RHEED Study on Growth Process of Graphene by Low Pressure Chemical Vapor Deposition

^○Takuro Minato¹, Hitoshi Nakahara¹, Koji Asaka¹, Yahachi Saito¹ (Nagoya Univ.¹)

4:30 PM - 4:45 PM

△ [17p-D6-9] Graphene Growth on SiO₂ by Heat Treatment of Amorphous Carbon with metal catalysts

^○Yohei Hasebe¹, Hitoshi Nakahara¹, Koji Asaka¹, Yahachi Saito¹ (Nagoya Univ.¹)

4:45 PM - 5:00 PM

[17p-D6-10] High-resolution ARPES of oxygen-adsorbed graphene

^○Katsuaki Sugawara¹, Toru Takahashi², Eiichi Noguchi², James Kleeman², Takafumi Sato², Takashi Takahashi^1,2 (WPI-AIMR, Tohoku Univ.¹, Department of Physics, Tohoku Univ.²)

5:00 PM - 5:15 PM

△ [17p-D6-11] Electrical properties and chemical bonding structures of boron-doped ultrananocrys-talline diamond films prepared by coaxial arc plasma deposition

^○Yuki Katamune¹, Shinya Ohmagari², Hiroyuki Setoyama³, Tsuyoshi Yoshitake¹ (Kyushu Univ.¹, AIST², Kyushu Synchrotron Light Research Center³)

Oral presentation

[18a-D6-1~11] 6.2 Carbon-based thin films

Tue. Mar 18, 2014 9:00 AM - 12:15 PM D6 (D209)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-D6-1] High-crystalline quality AlN growth on diamond (111) substrates by metal-organic vapor phase epitaxy

^○Masataka Imura¹, Jiangwei Liu¹, Meiyong Liao¹, Yasuo Koide¹ (NIMS¹)

9:15 AM - 9:30 AM

△ [18a-D6-2] Heteroepitaxial Growth of Diamond on β-SiC by Antenna-edge Type Plasma CVD

^○Junya Yaita¹, Takayuki Iwasaki^1,2,3, Mutsuko Hatano^1,2,3 (Tokyo Tech¹, ALCA², CREST³)

9:30 AM - 9:45 AM

△ [18a-D6-3] Long Time Growth of the Heteroepitaxial Diamond by Direct Current Plasma CVD Apparatus with Heated Cathode

^○Hitomi Ikeda¹, Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Shozo Kono¹, Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹, TOPLAS ENGINEERING²)

9:45 AM - 10:00 AM

△ [18a-D6-4] Selective Growth of Diamond with Bottom-up Approach

^○Satoko Furuyama¹, Takayuki Iwasaki^1,2,3, Mutsuko Hatano^1,2,3 (Tokyo Tech.¹, ALCA², CREST³)

10:00 AM - 10:15 AM

[18a-D6-5] Structural investigation of single-crystalline diamond films grown by hot-filament CVD

^○Shinya Ohmagari¹, Hideaki Yamada¹, Akiyoshi Chayahara¹, Shin-ichi Shikata¹ (AIST, UBIQUEN¹)

10:15 AM - 10:30 AM

[18a-D6-6] Fabrication of a 2-inch size mosaic wafer of single-crystal diamond

^○Hideaki Yamada¹, Akiyoshi Chayahara¹, Yoshiaki Mokuno¹, Yukako Kato¹, Shinichi Shikata¹ (AIST¹)

10:30 AM - 10:45 AM

[18a-D6-7] Phosphorus doping efficiency in n-type CVD diamond thin films

^○（PC）Ryota Ohtani¹, Takashi Yamamoto¹, Satoshi Koizumi^1,3, Satoshi Yamasaki^2,3 (NIMS¹, AIST², JST-CREST³)

Break 10:45〜11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:30 AM

[18a-D6-8] [INVITED]Optically detected magnetic resonance imaging by use of fluorescent nanodiamonds and its application to biological samples

^○Yohsuke Yoshinari¹ (Kyoto Univ.¹)

11:30 AM - 11:45 AM

[18a-D6-9] Controlled axis of nitrogen-vacancy centers in diamond fabricated using nitrogen-doped chemical vapor deposition on micro-patterned substrate

Tomohiro Gomi¹, Hideyuki Watanabe², Kazuki Kaneko¹, Koji Fujisasawa¹, Hitoshi Umezawa², Shinichi Shikata², Kohei Itoh¹, ^○Junko Ishi-Hayase¹ (Keio Univ.¹, AIST²)

11:45 AM - 12:00 PM

△ [18a-D6-10] Electric Field Effect on NV Centers in Diamond under High Electric Field

^○Satoshi Kobayashi¹, Kenichi Nagao¹, Shinji Miwa¹, Yoshishige Suzuki¹, Norikazu Mizuochi¹ (Osaka Univ.¹)

12:00 PM - 12:15 PM

[18a-D6-11] Diamond films growth for single photon emitter formation

^○Tokuyuki TERAJI¹, Takashi YAMAMOTO^1,2, Satoshi KOIZUMI¹, Kenji WATANABE¹, Shinobu ONODA², Takeshi OHSHIMA², Boris NAYDENOV³, Fedor JELEZKO³, Junichi ISOYA⁴ (NIMS¹, JAEA², Univ. Ulm³, Univ. Tsukuba⁴)

Oral presentation

[18p-D6-1~19] 6.2 Carbon-based thin films

Tue. Mar 18, 2014 1:30 PM - 6:45 PM D6 (D209)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:15〜13:30 （12:15 PM - 1:30 PM）

1:30 PM - 1:45 PM

[18p-D6-1] Formation of atomically flat OH-terminated diamond(111) surfaces

^○Daisuke Miyata¹, Syogo Kamiya¹, Norio Tokuda^1,2,3, Toshiharu Makino^2,3, Daisuke Takeuchi^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad.School of Natural Sci.&Tech.Kanazawa Univ.¹, AIST², JST, CREST³)

1:45 PM - 2:00 PM

△ [18p-D6-2] Surface structure of (111) diamond with recovered surface conduction after heat treatment

^○Yuji Seshimo¹, Tomohiro Hakamata¹, Wako Ono¹, Yuki Yokoyama¹, Daiki Utsunomiya¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

2:00 PM - 2:15 PM

[18p-D6-3] Oxygen Coverage and Structure on Hot-Acid- and VUV-Ozone-Treated Diamond (001) Surfaces

^○Shozo Kono¹, Tokuyuki Teraji², Hideyuki Kodama¹, Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹, NIMS²)

2:15 PM - 2:30 PM

△ [18p-D6-4] Synchrotron X-Ray Topography Observation of CVD Diamond Single Crystal

^○（B）Satoshi Masuya¹, Ryuichi Murakami¹, Hitoshi Sumiya², Makoto Kasu¹ (Saga Univ.¹, Sumitomo Electric.²)

2:30 PM - 2:45 PM

△ [18p-D6-5] Defect examination of heteroepitaxial diamond by etch pit method Ⅴ

^○Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹, TOPLAS ENG.²)

2:45 PM - 3:00 PM

[18p-D6-6] Dislocations of HPHT Diamond Single Crystals Observed by Synchrotron Radiation X-ray Topography

Ryuichi Murakami¹, Satoshi Masuya¹, Akikazu Matsunaga¹, Kazuya Harada¹, Hitoshi Sumiya², ^○Makoto Kasu¹ (Saga Univ.¹, Sumitomo Electric.²)

Break 15:00〜15:15 （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[18p-D6-7] Breakdown electric field of diamond estimated using ionization integrals

^○Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (Waseda Nano Inst.¹, Waseda Univ.²)

3:30 PM - 3:45 PM

△ [18p-D6-8] Wide Range Temperature(10-673K) Operation of C-H Bonds Diamond MOSFETs

^○Dechen Xu¹, Hidetoshi Tsuboi¹, Tomoya Naruo¹, Tetsuya Yamada¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

3:45 PM - 4:00 PM

△ [18p-D6-9] Enhancement of dielectric strength of ALD-Al₂O₃ films using heavy-water oxidant

^○Kazuhiro Kuruma¹, Tatsuya Saito¹, Akira Daicho¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

4:00 PM - 4:15 PM

△ [18p-D6-10] Enhancing breakdown voltage of ALD-Al2O3 hydrogen-terminated diamond MOSFETs

^○Tetsuya Yamada¹, Tomoya Naruo¹, Hidetoshi Tsuboi¹, Dechen Xu¹, Akira Daicho¹, Tatsuya Saito¹, Kazuhiro Kuruma¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

4:15 PM - 4:30 PM

[18p-D6-11] Barrier Height of Au-Ohmic Electrode on Diamond (001) Surface

^○Shozo Kono¹, Tokuyuki Teraji², Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹, NIMS²)

4:30 PM - 4:45 PM

△ [18p-D6-12] The valuation of surface potential for heavily doped n-type diamond semiconductors by Kelvin probe force microscopy

^○Kazuya Shirota^1,2,3, Daisuke Takeuchi^2,3, Masahiko Ogura^2,3, Hiromitsu Kato^2,3, Toshiharu Makino^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^1,2,3 (Tsukuba Univ.¹, AIST², CREST³)

Break 16:45〜17:00 （4:45 PM - 5:00 PM）

5:00 PM - 5:15 PM

▼ [18p-D6-13] Normally-off HfO2/diamond field effect transistors fabrication

^○Jiangwei Liu¹, Meiyong Liao¹, Mastaka Imura¹, Yasuo Koide¹ (National Institute for Materials Science¹)

5:15 PM - 5:30 PM

▲ [18p-D6-14] WC/p-diamond Schottky Diode Behaviour at High Temperature

^○（PC）Alexandre Fiori¹, Tokuyuki Teraji¹, Yasuo Koide¹ (NIMS¹)

5:30 PM - 5:45 PM

[18p-D6-15] Frequency dispersion properties at Al₂O₃ and HfO₂/H-terminated diamond interfaces

^○Yasuo Koide^1,2, Jiangwei Liu¹, Meiyong Liao¹, Masataka Imura¹, Hirotaka Osatao², Eiichiro Watanabe², Daijyu Tsuya² (NIMS¹, NIMS NanoFab²)

5:45 PM - 6:00 PM

△ [18p-D6-16] Fabrication of fluorine terminated electrolyte Solution Gate FET with boron doped channels

^○Mikinori Kobayashi¹, Yukihiro Shintani^1,2, Miho Myodo¹, Hiroshi Kawarada¹ (Waseda University¹, Yokogawa Electric Corp.²)

6:00 PM - 6:15 PM

△ [18p-D6-17] Superconductivity of Heavily Boron-doped Diamond(111) by Spherical-Resonator-Microwave-Plasma CVD

^○Taisuke Kageura¹, Mitsuyasu Koga¹, Takahide Yamaguchi², Yoshihiko Takano², Hiroshi Kawarada¹ (Waseda Univ.¹, NIMS²)

6:15 PM - 6:30 PM

[18p-D6-18] Misorientation angle dependence of homoepitaxial growth on (001) phosphorus-doped n-type diamond

^○Hiroyuki Kawashima^1,3, hiromitsu Kato^1,3, Masahiko Ogura^1,3, Mariko Suzuki^1,2,3, Toshiharu Makino^1,3, Daisuke Takeuchi^1,3, Satoshi Yamasaki^1,3 (AIST¹, Toshiba Corp.², JST-CREST³)

6:30 PM - 6:45 PM

[18p-D6-19] Electrical properties for diamond Schottky-pn diode

^○Toshiharu Makino^1,2, Daisuke Kuwabara^1,2,3, Tsubasa Matsumoto^1,2,3, Hiromitsu Kato^1,2, Daisuke Takeuchi^1,2, Masahiko Ogura^1,2, Hideyo Okushi^1,2, Satoshi Yamasaki^1,2,3 (ETRI, AIST¹, CREST/JST², Univ. of Tsukuba³)

Poster presentation

[19a-PG1-1~10] 6.2 Carbon-based thin films

Wed. Mar 19, 2014 9:30 AM - 11:30 AM PG1 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-PG1-1] A Tool using the DLC Film for an Electron Microscope - Image Evaluation of the Observation Sample in the Atmosphere -

^○Tomotaka Kozuki¹, Norio Nawachi² (Hiroshima Intl Univ.¹, Hiroshima Tech Institute²)

9:30 AM - 11:30 AM

[19a-PG1-2] Characterization of a-C: H Thin Films Fabricated by Low-energy Electron Beam Irradiation on Solid Thin Films of Benzene at Cryogenic Temperature

^○Takashi Saito¹, Haruka Soga¹, Naoki Kobayashi¹, Tetsuya Sato¹ (Univ. of Yamanashi¹)

9:30 AM - 11:30 AM

[19a-PG1-3] Characterization of Diamond-Like Carbon Films by RF Plasma CVD from CO Gas

^○（B）Yuki Yasuoka¹, Toru Harigai¹, Hiroshi Furuta^1,2, Akimitsu Hatta^1,2, Tsuneo Suzuki³, Hidetoshi Saitoh³ (Kochi Univ. Technol.¹, Inst. Nanotechnol., Kochi Univ. Technol.², Nagaoka Univ. Technol.³)

9:30 AM - 11:30 AM

△ [19a-PG1-4] Evaluation of Electrical Conductivity of Iodine doped a-C:H Films

^○So Maeara¹, Kazuki Kouchi¹, Masaaki Yamazato¹, Akira Higa¹ (University of the Ryukyus¹)

9:30 AM - 11:30 AM

[19a-PG1-5] Effects of the hydrogen flow in the carbon nitride deposition using microwave plasma CVD

^○yusuke Takahashi¹, Hitoe Habuchi¹, Hirofumi Takikawa² (Gifu Natl. coll. Technol.¹, Toyohashi Univ. Technol.²)

9:30 AM - 11:30 AM

[19a-PG1-6] Emission spectra of carbon nitride thin films generated by laser irradiation

^○Masaki Satake¹, Takashi Okawa¹, Kunio Itoh¹, Michihito Teramoto², Shigeyuki Nakamura², Kenta Kametomo³, Ken-ichi Takarabe³, Kazutoshi Fukui⁴, Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Tsuyama Nat. College of Tech.², Okayama Univ. of Sci.³, Univ. of Fukui⁴)

9:30 AM - 11:30 AM

[19a-PG1-7] Emission characteristics of BCN thin films fabricated by RF-sputtering methods

^○Takashi Okawa¹, Masaki Satake¹, Kunio Itoh¹, Michihito Teramoto², Shigeyuki Nakamura², Kenta Kametomo³, Ken-ichi Takarabe³, Kazutoshi Fukui⁴, Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Tsuyama Nat. College of Tech.², Okayama Univ. of Sci.³, Univ. of Fukui⁴)

9:30 AM - 11:30 AM

[19a-PG1-8] Formation of graphene and development of patterning method by the electron irradiation applied to the C₆₁ fullerene

^○Seiya Matsukawa¹, Tomoki Imamura¹, Kyota Matsuo¹, Hiroshi Kubota¹ (GSST Kumamoto Univ.¹)

9:30 AM - 11:30 AM

[19a-PG1-9] Room-temperature diamond spin qubits by co-implantation of molecular nitrogen and carbon ions

^○（PC）Takashi Yamamoto^1,3, Christoph Muller², Liam McGuinness², Tokuyuki Teraji¹, Boris Naydenov², Shinobu Onoda³, Takeshi Ohshima³, Satoshi Koizumi¹, Jorg Wrachtrup⁴, Junichi Isoya⁵, Fedor Jelezko² (NIMS¹, Ulm univ.², JAEA³, Stuttgart univ.⁴, Tsukuba univ.⁵)

9:30 AM - 11:30 AM

[19a-PG1-10] Device structure suitable for CVD diamond detectors with signal current amplification function

^○Hiroaki Mori¹, Osamu Maida¹, Toshimichi Ito¹ (Graduate School of Eng, Osaka Univ.¹)

Sessions

06. Thin Films and Surfaces » 6.2 Carbon-based thin films

[17a-D6-1~11] 6.2 Carbon-based thin films

△ [17a-D6-3] Structural change of hydrogenated amorphous carbon films using rf plasma CVD with application of pulsed bias voltage

△ [17a-D6-9] The change of refractive index and extinction coefficient of hydrogenated DLC films by the soft X-ray irradiation

▲ [17a-D6-11] All carbon solarcell by microwave surface wave plasma CVD

[17p-D6-1~11] 6.2 Carbon-based thin films

△ [17p-D6-4] Influence of thermal history on the electrical conductivity of amorphous carbon nitride films

△ [17p-D6-5] Dependence of photo-response of a-CNx films on deposition temperature

△ [17p-D6-8] In situ RHEED Study on Growth Process of Graphene by Low Pressure Chemical Vapor Deposition

△ [17p-D6-9] Graphene Growth on SiO2 by Heat Treatment of Amorphous Carbon with metal catalysts

△ [17p-D6-11] Electrical properties and chemical bonding structures of boron-doped ultrananocrys-talline diamond films prepared by coaxial arc plasma deposition

[18a-D6-1~11] 6.2 Carbon-based thin films

△ [18a-D6-2] Heteroepitaxial Growth of Diamond on β-SiC by Antenna-edge Type Plasma CVD

△ [18a-D6-3] Long Time Growth of the Heteroepitaxial Diamond by Direct Current Plasma CVD Apparatus with Heated Cathode

△ [18a-D6-4] Selective Growth of Diamond with Bottom-up Approach

△ [18a-D6-10] Electric Field Effect on NV Centers in Diamond under High Electric Field

[18p-D6-1~19] 6.2 Carbon-based thin films

△ [18p-D6-2] Surface structure of (111) diamond with recovered surface conduction after heat treatment

△ [18p-D6-4] Synchrotron X-Ray Topography Observation of CVD Diamond Single Crystal

△ [18p-D6-5] Defect examination of heteroepitaxial diamond by etch pit method Ⅴ

△ [18p-D6-8] Wide Range Temperature(10-673K) Operation of C-H Bonds Diamond MOSFETs

△ [18p-D6-9] Enhancement of dielectric strength of ALD-Al2O3 films using heavy-water oxidant

△ [18p-D6-10] Enhancing breakdown voltage of ALD-Al2O3 hydrogen-terminated diamond MOSFETs

△ [18p-D6-12] The valuation of surface potential for heavily doped n-type diamond semiconductors by Kelvin probe force microscopy

▼ [18p-D6-13] Normally-off HfO2/diamond field effect transistors fabrication

▲ [18p-D6-14] WC/p-diamond Schottky Diode Behaviour at High Temperature

△ [18p-D6-16] Fabrication of fluorine terminated electrolyte Solution Gate FET with boron doped channels

△ [18p-D6-17] Superconductivity of Heavily Boron-doped Diamond(111) by Spherical-Resonator-Microwave-Plasma CVD

[19a-PG1-1~10] 6.2 Carbon-based thin films

△ [19a-PG1-4] Evaluation of Electrical Conductivity of Iodine doped a-C:H Films

△ [17p-D6-5] Dependence of photo-response of a-CN_x films on deposition temperature

△ [17p-D6-9] Graphene Growth on SiO₂ by Heat Treatment of Amorphous Carbon with metal catalysts

△ [18p-D6-9] Enhancement of dielectric strength of ALD-Al₂O₃ films using heavy-water oxidant