[18p-E10-1~20] Nanocarbon Technology

[18p-E10-20] Mobility enhancement effect of oxide semiconductor transistor with surrounded channel structure

^○Shinpei Matsuda¹, Daisuke Matsubayashi¹, Yoshiyuki Kobayashi¹, Masahiko Hayakawa², Yukinori Shima², Satoru Saito², Kenichi Okazaki², Junichi Koezuka², Shunpei Yamazaki^1,2 (Semiconductor Energy Laboratory Co., LTD.¹, Advanced Film Device Inc.²)

Keywords:酸化物半導体,InGaZnO,移動度