[18p-E13-1~18] 15.4 III-V-group nitride crystals

△ [18p-E13-12] Study on carrier dynamics and piezoelectricity of high-insulation GaN at elevated temperatures by noncontacting ultrasound resonance method

^○（M1）Yuki Tsutsui¹, Hirotsugu Ogi¹, Nobutomo Nakamura¹, Yusuke Mori², Mamoru Imade², Masashi Yoshimura², Masahiko Hirao¹ (Osaka Univ. Grad. Sch. of Engineering Science¹, Osaka Univ. Grad. Sch. of Engineering²)

Keywords:GaN,高温,圧電定数