The 61st JSAP Spring Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E13-1~18] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 1:00 PM - 6:15 PM E13 (E301)

4:45 PM - 5:00 PM

△ [18p-E13-13] Homo-epitaxial growth on trench patterned AlN free-standing substrate by HVPE

○（M1）Yoshinobu Watanabe1, Hideto Miyake1, Kazumasa Hiramatsu1, Yosuke Iwasaki2, Shunro Nagata2 (Mie Univ.1, JFE Mineral Company, LTD. Research Laboratories2)

Keywords:HVPE,AlN,溝加工