[18p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

△ [18p-E14-17] Morphological effect of Sn during Ge_1-xSn_x molecular beam epitaxy on Ge(111)

^○Hiromu Hamasaki¹, Syoichi Kabuyanagi¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

Keywords:Ge