[18p-E2-1~18] 17.1 Growth technology

[18p-E2-10] Process development for multi-layer graphene growth on 300mm Si wafer by low-temperature thermal CVD

^○Daisuke Nishide¹, Takashi Matsumoto¹, Ban Ito¹, Yuichi Yamazaki¹, Masayuki Katagiri¹, Hisao Miyazaki¹, Munehito Kagaya¹, Ryota Ifuku¹, Makoto Wada¹, Tatsuro Saito¹, Masayuki Kitamura¹, Masahito Watanabe¹, Naoshi Sakuma¹, Akihiro Kajita¹, Tadashi Sakai¹ (LEAP¹)

Keywords:グラフェン,Graphene