The 61st JSAP Spring Meeting, 2014

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Oral presentation

09. Applied Materials Science » 9.2 Nanowires, nanoparticles

[18p-F11-1~17] 9.2 Nanowires, nanoparticles

Tue. Mar 18, 2014 1:00 PM - 5:45 PM F11 (F407)

3:00 PM - 3:15 PM

[18p-F11-8] Gate length reduction via self-aligned source/drain stacks in the InAs nanowire FET

○Satoshi Sasaki1, Kouta Tateno1, Guoqiang Zhang1, Yuichi Harada1, Shiro Saito1, Akira Fujiwara1, Tetsuomi Sogawa1, Koji Muraki1 (NTT BRL1)

Keywords:ナノワイヤ,InAs,FET