Oral presentation

09. Applied Materials Science » 9.2 Nanowires, nanoparticles

[18p-F11-1~17] 9.2 Nanowires, nanoparticles

Tue. Mar 18, 2014 1:00 PM - 5:45 PM F11 (F407)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:00 (11:45 AM - 1:00 PM)

1:00 PM - 1:15 PM

[18p-F11-1] Catalyst-free growth of InGaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply

^○Ryosuke Kizu¹, Yoshio Honda¹, Masahito Yamaguchi^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center²)

1:15 PM - 1:30 PM

[18p-F11-2] Carrier Concentration Dependence on Crystal Structure and Emission Property of Catalyst-Free MBE-VLS Si-doped GaAs NWs

^○（D）Akio Suzuki¹, Atsuhiko Fukuyama¹, Ji-Hyun Paek², Masahito Yamaguchi², Tetsuo Ikari¹ (Univ. of Miyazaki¹, Nagoya Univ.²)

1:30 PM - 1:45 PM

[18p-F11-3] Improvement of energy conversion efficiency of InGaAs/GaAs nanowire-quantum-dot solar cells via introduction of AlGaAs/GaAs core/shell structures

^○Jun Tatebayashi¹, Katsuaki Tanabe¹, Masao Nishioka², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (NanoQUINE, the Univ. of Tokyo¹, IIS, the Univ. of Tokyo²)

1:45 PM - 2:00 PM

△ [18p-F11-4] In-situ characterization of ZnO nano-rod bending deformation and strain-induced bandgap shift using nano-probe cathodoluminescence technique

^○（PC）Kentaro Watanabe^1,2, Volk János³, Seungjun Oh¹, Takashiro Nagata¹, Yutaka Wakayama¹, Takashi Sekiguchi¹ (NIMS¹, Univ. of Tsukuba², MFA³)

2:00 PM - 2:15 PM

[18p-F11-5] Electroluminescence of InP-based nanowires with radial p-i-n structures

^○Kenichi Kawaguchi¹, Hisao Sudo¹, Manabu Matsuda¹, Mitsuru Ekawa¹, Tsuyoshi Yamamoto¹, Yasuhiko Arakawa² (Fujitsu Labs.¹, INQIE, Univ. of Tokyo²)

Break 14:15〜14:30 (2:15 PM - 2:30 PM)

2:30 PM - 2:45 PM

[18p-F11-6] Strain characterization of InP/InAs heterostructure nanowires

^○Guoqiang Zhang¹, Shuhei Nakagawa^1,2, Kouta Tateno¹, Tetsuomi Sogawa¹, Hideki Gotoh¹ (NTT BRL¹, Toyohashi Tech.²)

2:45 PM - 3:00 PM

[18p-F11-7] VLS growth of InAsP nanowires with TBCl

^○Kouta Tateno¹, Guoqiang Zhang¹, Hideki Gotoh¹ (NTT Basic Research Labs.¹)

3:00 PM - 3:15 PM

[18p-F11-8] Gate length reduction via self-aligned source/drain stacks in the InAs nanowire FET

^○Satoshi Sasaki¹, Kouta Tateno¹, Guoqiang Zhang¹, Yuichi Harada¹, Shiro Saito¹, Akira Fujiwara¹, Tetsuomi Sogawa¹, Koji Muraki¹ (NTT BRL¹)

3:15 PM - 3:30 PM

[18p-F11-9] Fabrication of Buried GaAs/AlGaAs Heterostructure Nanowires and Their Wet Oxidation

Hideaki Hibi¹, Masahiko Kondow¹, ^○Fumitaro Ishikawa² (Osaka Univ.¹, Ehime Univ.²)

3:30 PM - 3:45 PM

[18p-F11-10] Theoretical study for thermal conductivity of InAs nanowires: effects of rotational twins

^○Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie University¹)

3:45 PM - 4:00 PM

[18p-F11-11] Screened-exchange density functional calculations of III-V semiconductor polytypes

^○Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie University¹)

Break 16:00〜16:15 (4:00 PM - 4:15 PM)

4:15 PM - 4:30 PM

[18p-F11-12] Fabrication of hetero junction of Ge/Si core-shell nanowire and Si nanowire

^○Koudai Morita¹, Tomohiro Noguchi¹, Marolop Simanullang¹, Kouichi Usami¹, Tetsuo Kodera¹, shunri Oda¹ (QNERC,Tokyo Tech¹)

4:30 PM - 4:45 PM

[18p-F11-13] Chemical Doping of Tellurium Nanowire Sheets

^○Yoshiyuki Nonoguchi¹, Fumihiko Kamikonya¹, Tsuyoshi Kawai¹ (Nara Inst. Sci. Tech.¹)

4:45 PM - 5:00 PM

[18p-F11-14] Formation of ITO Nanowires using Conventional Magnetron Sputtering

^○Naoki Yamamoto¹, Kirihiko Morisawa¹, Junnosuke Murakami², Yasuhiro Nakatani² (Kochi Univ. Technol.¹, Sekisui Chemical Co.²)

5:00 PM - 5:15 PM

[18p-F11-15] Analyses of Electrical and Gas Sensing Properties of Hydrothermal Titanate Nanotubes

^○Masayuki Ishii¹, Ji-Won Lee², Masahiro Terauchi², Takeshi Yoshimura¹, Tadachika Nakayama², Norifumi Fujimura¹ (Osaka Pref. Univ.¹, Nagaoka Univ. of Tech.²)

5:15 PM - 5:30 PM

[18p-F11-16] Fabrication of GaAs nanowires by anodic etching

^○Hidetaka Asoh¹, Sachiko Ono¹ (Kogakuin Univ.¹)

5:30 PM - 5:45 PM

[18p-F11-17] Enhancement of Thermoelectric Properties via Radial Dopant Distribution in Boron-doped Silicon Nanowires

Fuwei Zhuge¹, ^○Takeshi Yanagida¹, Naoki Fukata², Ken Uchida³, Masaki Kanai¹, Kazuki Nagashima¹, Gang Meng¹, He Yong¹, Sakon Rahong¹, Tomoji Kawai¹ (ISIR Osaka Univ¹, NIMS², Keio Univ³)

Session information

[18p-F11-1~17] 9.2 Nanowires, nanoparticles

△ [18p-F11-4] In-situ characterization of ZnO nano-rod bending deformation and strain-induced bandgap shift using nano-probe cathodoluminescence technique