[18p-PG3-1~19] 14.3 Electron devices and Process technology

[18p-PG3-1] Fabrication and characterization of InSb-HEMTs structures using strain-relaxed AlInSb buffer layer

^○Fujikawa Sachie^1,2, Takagi Yusuke^1,2, Maeda Takaomi^1,2, Konaka Yutaro^1,2, Hara Sinsuke², Watanabe Issei^1,2, Endo Akira², Yamashit Yoshimi², Kasamatsu Akifumi², Fujishir Hiroki^1,2 (Tokyo Univ. of Science¹, National Institute of Info. and Com. Tech.²)

Keywords:AlInSb