Theoretical study of channel structure for realizing InSb PHEMTs with high electron density and high transconductance

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG3 (G棟2階)

1:30 PM - 3:30 PM

^○（D）Yui Nishio¹, Marie Sato¹, Takato Sato¹, Naomi Hirayama¹, Tsutomu Iida¹, Yoshifumi Takanashi¹ (TUS¹)

Keywords:InSb,HEMT,二次元電子ガス