The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-PG3-1~19] 14.3 Electron devices and Process technology

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG3 (G棟2階)

1:30 PM - 3:30 PM

△ [18p-PG3-11] Analysis of traps in GaN HEMTs by bias dependence of transient response

○Yutaro Yamaguchi1, Toshiyuki Oishi1, Hiroshi Otsuka1, Koji Yamanaka1, Teo Koon Hoo2, Yasuyuki Miyamoto3 (Mitsubishi Electric corp.1, Mitsubishi Electric Research Laboratories2, Tokyo Institute of Technology3)

Keywords:GaN,HEMT