[18p-PG3-1~19] 14.3 Electron devices and Process technology

[18p-PG3-13] Electrical Characterization of interface and bulk traps of AlGaN/GaN Structure by Electrical Stress Measurement

^○Xihao Tan¹, takamasa Kawanago², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:AlGaN/GaN　キャパシタンス　トラップ