[18p-PG3-1~19] 14.3 Electron devices and Process technology

[18p-PG3-6] Carbon-Related Deep-Level Defects and Turn-On Current Recovery Characteristics in AlGaN/GaN Hetero-Structures

^○Yoshitaka Nakano¹, Yoshihiro Irokawa², Masatomo Sumiya², Yasunobu Sumida³, Shuichi Yagi³, Hiroji Kawai³ (Chubu Univ.¹, NIMS², POWDEC³)

Keywords:AlGaN/GaNヘテロ構造,炭素関連欠陥準位,ターンオン電流回復特性