AlGaN/GaN-based p-channel HFETs with wide-operating temperature

Hiroaki Yonezawa

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D8 (D215)

11:30 AM - 11:45 AM

△ [19a-D8-10] AlGaN/GaN-based p-channel HFETs with wide-operating temperature

^○Hiroaki Yonezawa¹, Rei Kayanuma¹, Akira Nakajima³, Shinichi Nishizawa³, Hiromichi Ohashi³, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai², Kazuo Tsutsui¹ (Tokyo Tech.IGSSE¹, Tokyo Tech.FRC², AIST³)

Keywords:HFET,ＧａＮ,p-channel

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