[19a-D8-1~13] 14.3 Electron devices and Process technology

△ [19a-D8-9] Current Collapse Suppression in AlGaN/GaN HEMTs by Means of Slant Field Plates Fabricated by Multi-layer SiCN

^○（M2）Kengo Kobayashi¹, Shinya Hatakeyama¹, Tomohiro Yoshida¹, Yuhei Yabe¹, Daniel Piedra², Tomas Palacios², Taiichi Otsuji¹, Tetsuya Suemitsu¹ (RIEC, Tohoku Univ.¹, MTL, MIT²)

Keywords:フィールドプレート,電流コラプス,GaN