The 61st JSAP Spring Meeting, 2014

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Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[19a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

Wed. Mar 19, 2014 9:00 AM - 11:45 AM E14 (E302)

10:00 AM - 10:15 AM

[19a-E14-5] Leakage Current Characteristics of Poly-Si TFTs fabricated with Double-Line Beam Continuous-Wave Laser Lateral Crystallization

○Masayuki Yamano1, Shin-Ichiro Kuroki1, Tadashi Sato1, Koji Kotani2, Takamaro Kikkawa1 (RNBS1, Tohoku Univ.2)

Keywords:TFT,薄膜トランジスタ,poly-Si