Leakage Current Characteristics of Poly-Si TFTs fabricated with Double-Line Beam Continuous-Wave Laser Lateral Crystallization

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

Wed. Mar 19, 2014 9:00 AM - 11:45 AM E14 (E302)

10:00 AM - 10:15 AM

^○Masayuki Yamano¹, Shin-Ichiro Kuroki¹, Tadashi Sato¹, Koji Kotani², Takamaro Kikkawa¹ (RNBS¹, Tohoku Univ.²)

Keywords:TFT,薄膜トランジスタ,poly-Si