[19a-F6-1~6] 8.4 Plasma etching

[19a-F6-3] Development of High Aspect Ratio TSV Etching Process for High-capacitor Fabrication

^○Takahide Murayama^1,2, Toshiyuki Sakuishi^1,2, Yasuhiro Morikawa^1,2, Koukou Suu^1,2 (NMEMS Technology Research Organization¹, ULVAC, Inc., Inst. of Semiconductor and Electronics Tech.²)

Keywords:TSV,Si Etching,Capacitor