Characterization of MOS Interface Properties in Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN Structures with Dry-etched AlGaN Surface

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 2:00 PM - 5:30 PM D8 (D215)

4:45 PM - 5:00 PM

^○Zenji Yatabe¹, Yujin Hori¹, Tamotsu Hashizume^1,2 (RCIQE, Hokkaido Univ.¹, JST-CREST²)

Keywords:窒化物半導体,MOS,界面準位