The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 2:00 PM - 5:30 PM D8 (D215)

5:00 PM - 5:15 PM

▲ [19p-D8-12] Interface state density, gate-control efficiency, and intrinsic transconductance of AlN/AlGaN/GaN metal-insulator-semiconductor devices

○Hong-An SHIH1, Masahiro Kudo1, Tuan Quy Nguyen1, Toshi-kazu Suzuki1 (JAIST1)

Keywords:MIS, interface state characterization