[19p-D8-1~13] 14.3 Electron devices and Process technology

[19p-D8-4] Investigation on interface traps in AlGaN/GaN heterojunction by conductance method

^○Pucheng Liu¹, Chunmeng Dou¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:AlGaN/GaNヘテロ接合,界面トラップ