[19p-D8-1~13] 14.3 Electron devices and Process technology

[19p-D8-5] Ti / C ratio and film thickness dependency of Ti/C/TiN contact resistance on AlGaN / GaN

^○Yoshihiro Matsukawa¹, Mari Okamoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Wataru Saito³, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE², Toshiba corp.³)

Keywords:AlGaN,コンタクト抵抗,GaN