The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

08. Plasma Electronics » 8.4 Plasma etching

[19p-F6-1~18] 8.4 Plasma etching

Wed. Mar 19, 2014 2:00 PM - 7:00 PM F6 (F306)

4:45 PM - 5:00 PM

[19p-F6-11] Etching reactions for Si, SiO2 and SiN by SiBrx ions

kazuhiro karahashi1, yu muraki1, hu li1, masaaki matsukuma2, satoshi hamaguchi1 (Osaka Univ.1, Tokyo Electron Ltd.2)

Keywords:エッチング生成物,HBr