[19p-F6-1~18] 8.4 Plasma etching

[19p-F6-10] Impacts of Plasma-Induced Charging Damage on Random Telegraph Noise (RTN) Characteristics of Advanced MOSFETs

Masayuki Kamei¹, ^○Koji Eriguchi¹, Yoshinori Takao¹, Kouichi Ono¹ (Kyoto Univ.¹)

Keywords:プラズマダメージ,ランダムテレグラフノイズ,MOSFET