[19p-F9-1~17] 15.8 Crystal evaluation, impurities and crystal defects

△ [19p-F9-12] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers (3) -Effect on Transition Metal Impurities Gettering of p/p+ Epitaxial Silicon Wafers-

^○Takuro Iwanaga¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (SUMCO CORPORATION¹)

Keywords:ゲッタリング,シリコンウェーハ,クラスターイオン