[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-27] Atomically flat interface of La-silicate/Si with W2C gate electrodes

^○Shuhei Hosoda¹, Tuokedaerhan Kamale¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE²)

Keywords:high-k