[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-28] Characterization of Ni Silicides Schottky Diodes by Stacked Silicidation Sputtering Process

^○Hiroaki Imamura¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:Niシリサイド,ショットキーダイオード,積層シリサイド化スパッタプロセス