[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-29] Infrared Absorption Characteristic of Mg₂Si formed by anneaking of Mg/Si laminate structure

^○Hiroki Hasegawa¹, Yan Wu¹, Jinhan Song¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayasshi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE²)

Keywords:マクネシウムシリサイド,赤外線吸収,トンネルFET