[19p-PG4-1~5] 13.5 Si-English Session

▲ [19p-PG4-4] Type-II Staggered Hetero-Junction Tunnel FETs with Ge sources and Biaxial Tensile Strain Si Channels

^○（D）Minsoo Kim^1,2, Yuki Wakabayashi¹, Ryosho Nakane¹, Masafumi Yokoyama¹, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

Keywords:Tunnel FET,Hetero-Junction,Ge-source