Analysis of Narrow Channel Effect in MOSFETs using Three-dimensional TCAD Simulator

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Thu. Mar 20, 2014 9:00 AM - 11:45 AM D9 (D315)

11:15 AM - 11:30 AM

^○Shin-ichiro Kobayashi¹, Teppei Tamaki¹, Achihiro Hmano¹, Takuhito Kuwabara¹, Takeo Ikezawa¹, Hideaki Koike¹ (AdvanceSoft Co. Ltd¹)

Keywords:TCAD,デバイスシミュレータ,MOSFET