[20a-F10-1~13] 13.5 Si-English Session

▲ [20a-F10-12] Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO₂ Interfacial Layer

^○Choong Hyun Lee^1,2, Cimang Lu^1,2, Wenfeng Zhang^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univ. of Tokyo¹, JST-CREST²)

Keywords:Ge,Mobility,EOT