[20a-F10-1~13] 13.5 Si-English Session

▲ [20a-F10-12] Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO₂ Interfacial Layer

^○ChoongHyunLee^1,2，CimangLu^1,2，WenfengZhang^1,2，TomonoriNishimura^1,2，KosukeNagashio^1,2，AkiraToriumi^1,2 (東大¹，JST-CREST²)

キーワード：Ge,Mobility,EOT