The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.5 Si-English Session

[20a-F10-1~13] 13.5 Si-English Session

Thu. Mar 20, 2014 9:00 AM - 12:30 PM F10 (F406)

12:00 PM - 12:15 PM

[20a-F10-12] Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO2 Interfacial Layer

Choong Hyun Lee1,2, Cimang Lu1,2, Wenfeng Zhang1,2, Tomonori Nishimura1,2, Kosuke Nagashio1,2, Akira Toriumi1,2 (Univ. of Tokyo1, JST-CREST2)

Keywords:Ge,Mobility,EOT