Oral presentation

[13a-4C-1~12] 13.3 Insulator technology

Sun. Sep 13, 2015 9:00 AM - 12:15 PM 4C (432)

座長:渡邉孝信(早大),右田真司(産総研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

△ [13a-4C-1] Charge-transfer type molecular dynamics for oxidation of Si/SiO₂ interface

〇(D)So Takamoto¹, Takahiro Yamasaki^2,3, Takahisa Ohno^2,3,4, Chioko Kaneta^3,5, Satoshi Izumi¹, Shinsuke Sakai¹ (1.Univ. of Tokyo, 2.NIMS, 3.MARCEED, 4.IIS, Univ. of Tokyo, 5.Fujitsu Lab.)

9:15 AM - 9:30 AM

[13a-4C-2] Electrical Characteristics of Plasma ALD SiO₂ Films with Nitrogen Incorporation

〇Koudai Endo¹, Yiming Lei¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹ (1.Tokyo Tech.IGSSE)

9:30 AM - 9:45 AM

[13a-4C-3] Characterization of SiON/Si Structures by Ar/N₂ Plasma Nitridation and Kr/O₂ Plasma Oxidation at Low Temperature

〇yuta fujikawa¹, yoshitaka iwazaki¹, tomo ueno¹ (1.TUAT)

9:45 AM - 10:00 AM

[13a-4C-4] Evaluation of hole trapping characteristics of MONOS structures using the constant current carrier injection method (Ⅱ)

〇(M2)Shin Tanaka¹, S. R. A. Ahmed², Kaihei Kato³, Kousaku Hukuyama³, Kousuke Ozaki³, Kiyoteru Kobayashi^1,2,3 (1.GRAD SCH Eng, Tokai Univ., 2.GRAD SCH S&T, Tokai Univ., 3.SCH Eng, Tokai Univ.)

10:00 AM - 10:15 AM

[13a-4C-5] Substrate temperature dependence of ALD alumina film using oxygen plasma

〇(M1)Yoshihiko Izumi¹, Ryo Fukui¹, Yoshinori Nakamura¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Tokyo Tech. IGSSE)

10:15 AM - 10:30 AM

[13a-4C-6] An insulator-charging/dipole model of electric conduction through ALD-Al₂O₃ films

〇Atsushi Hiraiwa¹, Tatsuya Saito², Daisuke Matsumura², Hiroshi Kawarada^1,2 (1.RONL, Waseda Univ., 2.FSE, Waseda Univ.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[13a-4C-7] Quantitative Reproduction of the Dipole Layer at high-k/SiO₂ Interface by Molecular Dynamics Simularion Employing an Effective Charge Potential

〇Ryota Kunugi¹, Kosuke Shimura¹, Takanobu Watanabe^1,2 (1.Waseda Univ., 2.Waseda-INN)

11:00 AM - 11:15 AM

[13a-4C-8] Fabrication and Evaluation of ZrO2/Si Structure using ECR Sputtering

〇Yusuke Sugino¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri & Tech)

11:15 AM - 11:30 AM

▼ [13a-4C-9] The critical role of Si chemical potential in SiO₂ scavenging in HfO₂ gate stacks

〇(D)Xiuyan Li¹, Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

11:30 AM - 11:45 AM

[13a-4C-10] Structure analysis of ferroelectric Hf(Si)O by synchrotron XRD

〇Tsunehiro Ino¹, Riichiro Takaishi¹, Yasushi nakasaki¹, Shosuke Fujii¹, Daisuke Matsushita¹ (1.Toshiba Corporation)

11:45 AM - 12:00 PM

[13a-4C-11] Structural analysis of ferroelectric Hf(Y)O by infrared spectroscopy

〇Tsunehiro Ino¹, Yasushi Nakasaki¹, Shosuke Fujii¹, Daisuke Matushita¹ (1.Toshiba Corporation)

12:00 PM - 12:15 PM

[13a-4C-12] Effects of top TiN deposition process on electrical and physical properties of ferroelectric HfSiO MIM capacitor

〇Yuichi Kamimuta¹, Shosuke Fujii¹, Riichiro Takaishi¹, Tsunehiro Ino¹, Yasushi Nakasaki¹, Masumi Saitoh¹, Masato Koyama¹ (1.Toshiba Corp.)

Poster presentation

[13p-PA5-1~4] 13.3 Insulator technology

Sun. Sep 13, 2015 4:00 PM - 6:00 PM PA5 (Event Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

4:00 PM - 6:00 PM

[13p-PA5-1] Desorption of ammonia molecules from surface of silicon nitride film

〇Tomoki Oku¹, Masahiro Totsuka¹, Toshihiko Shiga¹, Hitoshi Watanabe¹ (1.Mitsubishi Electric.)

4:00 PM - 6:00 PM

△ [13p-PA5-2] A silicon oxynitridation by using thermally excited N₂O gas

〇Takahiro Takami¹, Yoshiharu Enta¹ (1.Hirosaki Univ.)

4:00 PM - 6:00 PM

[13p-PA5-3] Evaluation of Traps in Ge-MIS Structures Fabricated by Radical-Enhanced ALD

〇Hidehumi Narita¹, Daichi Yamada², Yukio Fukuda², Yosuke Kanuka¹, Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.Tokyo Univ. of Science, Suwa)

4:00 PM - 6:00 PM

[13p-PA5-4] Development of Deposition Technology of Gate SiO₂ Layer for GaN Power Transistors

〇Takuya Maekawa¹, Shota Takagi¹, Tetsuji Arai¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu², Katsunori Ueno³ (1.Yamanashi Univ., 2.SST, 3.Fujidenki)

Oral presentation

[14a-4C-1~10] 13.3 Insulator technology

Mon. Sep 14, 2015 9:00 AM - 11:45 AM 4C (432)

座長:渡部平司(阪大),井上真雄(ルネサス)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[14a-4C-1] Investigation of GeO₂ film characteristics formed by CVD method

〇Daiki Ogura¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri &Tech.)

9:15 AM - 9:30 AM

[14a-4C-2] Improvement Effect of Hf-Post Metallization Annealing on GeO₂/Ge Interface Characteristics

〇Jumpei Niida¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri. & Tech.)

9:30 AM - 9:45 AM

[14a-4C-3] Low-temperature formation of GeO₂/ Ge interface by using atomic layer deposition method and its electrical characteristics

〇(M2)Masayuki Kanematsu¹, Shigehisa Shibayama^1,2, Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.EcoTopia Sci. Inst., Nagoya Univ.)

9:45 AM - 10:00 AM

[14a-4C-4] Electrical properties of interface between High-k material and Ge with Ge nitride

〇yuji tanaka¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri. & Tech.)

10:00 AM - 10:15 AM

▼ [14a-4C-5] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

〇(M2)Mengnan Ke¹, Xiao Yu¹, Rui Zhang¹, Jian Kang¹, Chih-Yu Chang¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo Univ.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

▲ [14a-4C-6] [Young Scientist Presentation Award Speech] Interface-aware high-k dielectric designing for deep sub-nm EOT Ge gate stack

〇Cimang Lu^1,2, Choong Hyun Lee^1,2, Tomonori Nishimura^1,2, Akira Toriumi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

10:45 AM - 11:00 AM

[14a-4C-7] Study of High-quality Crystalline La₂O₃/Ge(111) Interface by using XPS Analyses

〇Takeshi Kanashima¹, Hiroshi Nohira², Masato Zenitaka¹, Taro Kobayashi¹, Riku Yamashiro¹, Shinya Yamada¹, Kohei Hamaya¹ (1.Osaka Univ., 2.Tokyo City Univ.)

11:00 AM - 11:15 AM

[14a-4C-8] Roughness Growth on Oxide Surface and Interface during Thermal Oxidation of SiC

〇(M1)Ryu Nagai¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Univ. Tsukuba)

11:15 AM - 11:30 AM

[14a-4C-9] Dependence of SiC Substrate on Thermally Grown SiO₂ Surface Roughness

〇(M1)KEISUKE BAMOTO¹, RYU HASUNUMA¹, KIKUO YAMABE¹ (1.Univ. of Tsukuba)

11:30 AM - 11:45 AM

△ [14a-4C-10] High-reliability SiO₂ films formed on diamond by thermal oxidation of Si

〇Takeshi HARA¹, Atsushi HIRAIWA¹, Hiroshi KAWARADA¹ (1.Waseda univ.)

Sessions

13 Semiconductors » 13.3 Insulator technology

[13a-4C-1~12] 13.3 Insulator technology

△ [13a-4C-1] Charge-transfer type molecular dynamics for oxidation of Si/SiO₂ interface

[13a-4C-2] Electrical Characteristics of Plasma ALD SiO₂ Films with Nitrogen Incorporation

[13a-4C-3] Characterization of SiON/Si Structures by Ar/N₂ Plasma Nitridation and Kr/O₂ Plasma Oxidation at Low Temperature

[13a-4C-4] Evaluation of hole trapping characteristics of MONOS structures using the constant current carrier injection method (Ⅱ)

[13a-4C-5] Substrate temperature dependence of ALD alumina film using oxygen plasma

[13a-4C-6] An insulator-charging/dipole model of electric conduction through ALD-Al₂O₃ films

[13a-4C-7] Quantitative Reproduction of the Dipole Layer at high-k/SiO₂ Interface by Molecular Dynamics Simularion Employing an Effective Charge Potential

[13a-4C-8] Fabrication and Evaluation of ZrO2/Si Structure using ECR Sputtering

▼ [13a-4C-9] The critical role of Si chemical potential in SiO₂ scavenging in HfO₂ gate stacks

[13a-4C-10] Structure analysis of ferroelectric Hf(Si)O by synchrotron XRD

[13a-4C-11] Structural analysis of ferroelectric Hf(Y)O by infrared spectroscopy

[13a-4C-12] Effects of top TiN deposition process on electrical and physical properties of ferroelectric HfSiO MIM capacitor

[13p-PA5-1~4] 13.3 Insulator technology

[13p-PA5-1] Desorption of ammonia molecules from surface of silicon nitride film

△ [13p-PA5-2] A silicon oxynitridation by using thermally excited N₂O gas

[13p-PA5-3] Evaluation of Traps in Ge-MIS Structures Fabricated by Radical-Enhanced ALD

[13p-PA5-4] Development of Deposition Technology of Gate SiO₂ Layer for GaN Power Transistors

[14a-4C-1~10] 13.3 Insulator technology

[14a-4C-1] Investigation of GeO₂ film characteristics formed by CVD method

[14a-4C-2] Improvement Effect of Hf-Post Metallization Annealing on GeO₂/Ge Interface Characteristics

[14a-4C-3] Low-temperature formation of GeO₂/ Ge interface by using atomic layer deposition method and its electrical characteristics

[14a-4C-4] Electrical properties of interface between High-k material and Ge with Ge nitride

▼ [14a-4C-5] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

▲ [14a-4C-6] [Young Scientist Presentation Award Speech] Interface-aware high-k dielectric designing for deep sub-nm EOT Ge gate stack

[14a-4C-7] Study of High-quality Crystalline La₂O₃/Ge(111) Interface by using XPS Analyses

[14a-4C-8] Roughness Growth on Oxide Surface and Interface during Thermal Oxidation of SiC

[14a-4C-9] Dependence of SiC Substrate on Thermally Grown SiO₂ Surface Roughness

△ [14a-4C-10] High-reliability SiO₂ films formed on diamond by thermal oxidation of Si

Authentication

Sessions

13 Semiconductors » 13.3 Insulator technology

[13a-4C-1~12] 13.3 Insulator technology

△ [13a-4C-1] Charge-transfer type molecular dynamics for oxidation of Si/SiO2 interface

▼ [13a-4C-9] The critical role of Si chemical potential in SiO2 scavenging in HfO2 gate stacks

[13p-PA5-1~4] 13.3 Insulator technology

△ [13p-PA5-2] A silicon oxynitridation by using thermally excited N2O gas

[14a-4C-1~10] 13.3 Insulator technology

▼ [14a-4C-5] Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

▲ [14a-4C-6] [Young Scientist Presentation Award Speech] Interface-aware high-k dielectric designing for deep sub-nm EOT Ge gate stack

△ [14a-4C-10] High-reliability SiO2 films formed on diamond by thermal oxidation of Si

Authentication

△ [13a-4C-1] Charge-transfer type molecular dynamics for oxidation of Si/SiO₂ interface

▼ [13a-4C-9] The critical role of Si chemical potential in SiO₂ scavenging in HfO₂ gate stacks

△ [13p-PA5-2] A silicon oxynitridation by using thermally excited N₂O gas

△ [14a-4C-10] High-reliability SiO₂ films formed on diamond by thermal oxidation of Si