Oral presentation

[14a-2T-1~12] 17.1 Growth technology

Mon. Sep 14, 2015 9:00 AM - 12:15 PM 2T (232)

座長:佐藤信太郎(富士通研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[14a-2T-1] Study on Morphological Changes of Large-Area Monolayer Graphene Oxide Films during Methane-Assisted Thermal Reduction

〇(M2)MuhammadZikri BinDzukarnain¹, Hibiki Imai¹, Toshiyuki Takami¹, Toshio Ogino^1,2 (1.Yokohama Nat. Univ., 2.CREST/JST)

9:15 AM - 9:30 AM

[14a-2T-2] Effects of Preparation Conditions on Graphene Synthesis from Graphene Oxide with CH₄Plasma

〇Seiji Obata¹, Minoru Sato¹, Keishi Akada¹, Koichiro Saiki¹ (1.Univ.of Tokyo)

9:30 AM - 9:45 AM

[14a-2T-3] XAFS study of single-layer graphene oxide grown on sapphire(0001)

〇Shiro Entani¹, Mitsunori Honda¹, Masaru Takizawa², Iwao Shimoyama¹, Hiroshi Naramoto¹, Seiji Sakai¹, Shinichi Shamoto¹ (1.JAEA, 2.Ritsumeikan Univ.)

9:45 AM - 10:00 AM

[14a-2T-4] Effect of process gas decomposition area on structural healing of graphene oxide under ultrahigh temperature and reactive environment

〇Takashi Ishida¹, Yoshihiko Shinoda², Yoshihiro Kobayashi¹ (1.Osaka Univ., 2.Wakasa Wan Energy Research Center)

10:00 AM - 10:15 AM

▲ [14a-2T-5] Chemical Surface Modification of Graphene Oxide (GO) by Femtosecond Laser Pulse Irradiation

〇(D)Muttaqin Muttaqin¹, Takahiro Nakamura¹, Shunichi Sato¹ (1.IMRAM, Tohoku Univ.)

10:15 AM - 10:30 AM

[14a-2T-6] Fabrication of ultrahigh-quality graphene on SiC(000\overline{1}) substrate and evaluation of Bernal-stacked domain

〇Keiichiro Tashima¹, Ryota Suto¹, Hirokazu Fukidome¹, Suemitsu Maki¹, Koji Horiba², Hiroshi Kumigashira², Masato Kotsugi³, Takuo Ohkochi³ (1.RIEC,Tohoku Univ., 2.KEK, 3.SPring-8 JASRI)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[14a-2T-7] Growth of graphene on single-crystalline SiC cantilevers

〇MAKOTO TAKAMURA¹, Jun Suda², Hiroki Hibino^1,3, Hideki Yamamoto¹ (1.NTT Basic Res. Labs., 2.Kyoto Univ., 3.Kwansei Gakuin Univ.)

11:00 AM - 11:15 AM

△ [14a-2T-8] Evaluation of Graphene on 4H-SiC(0001) with CF₄ Plasma Treatment

〇YUSUKE SHIINA¹, TOMOAKI NISHIMURA², TOHRU NAKAMURA¹ (1.Hosei Univ., 2.Ion Beam, Hosei Univ)

11:15 AM - 11:30 AM

△ [14a-2T-9] Observation of growing process of graphene formed by laser-induced growth on step & terrace structure of SiC (0001)

〇(M2)Masakazu Hattori¹, Hiroshi Ikenoue¹, Daisuke Nakamura¹, Tatsuo Okada¹, Kazuaki Furukawa², Makoto Takamura², Hiroki Hibino² (1.Kyushu Univ., 2.NTT Basic Res. Labs.)

11:30 AM - 11:45 AM

[14a-2T-10] New interface structures formed by SiC surface thermal decomposition in Ar atmosphere with C₂H₄ gas

〇Takashi Kajiwara¹, Shingo Hayashi¹, Anton Visikovskiy¹, Takushi Iimori², Fumio Komori², Satoru Tanaka¹ (1.Kyushu Univ., 2.Univ. of Tokyo)

11:45 AM - 12:00 PM

[14a-2T-11] Growth of single-layer graphitic carbon nitride on single crystal substrates

〇(D)Tokio Katoh¹, Seiji Obata², Keiji Ueno³, Koichiro Saiki^1,2 (1.UT Sch. of Sciences, 2.UT Frontier sci., 3.Saitama Univ.)

12:00 PM - 12:15 PM

[14a-2T-12] Van der Waals epitaxy growth of 3D topological insulator BiSbTeSe₂ thin film

〇(M2)YOSUKE SATAKE¹, YOICHI TANABE¹, Tu Ngoc Han¹, KATSUMI TANIGAKI^1,2 (1.Tohoku Univ., 2.Tohoku Univ. WPI)

Oral presentation

[14a-2U-1~12] 17.1 Growth technology

Mon. Sep 14, 2015 9:00 AM - 12:15 PM 2U (233)

座長:千足昇平(東大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[14a-2U-1] SWNT growth from Rh catalysts at low temperature by alcohol gas source method in high vacuum

〇Akinari Kozawa¹, Hoshimitsu Kiribayashi¹, Seigo Ogawa¹, Takahiro Saida¹, Shigeya Naritsuka¹, Takahiro Maruyama¹ (1.Meijo Univ.)

9:15 AM - 9:30 AM

[14a-2U-2] In situ NEXAFS measurements for CNT growth by thermal decomposition of SiC

〇Takahiro Maruyama¹, Shigeya Naritsuka¹, Kenta Amemiya² (1.Meijo Univ., 2.KEK PF)

9:30 AM - 9:45 AM

[14a-2U-3] Chirality Evaluation of Regrown Single-Walled Carbon Nanotubes

〇Yoshikazu Homma¹, Chiato Yamada¹, Genta Yamaguchi¹, Huafeng Wang¹, Yohei Yomogida², Takeshi Tanaka², Hiromichi Kataura² (1.Tokyo Univ. of Science, 2.AIST)

9:45 AM - 10:00 AM

[14a-2U-4] Growth Simulation of Defect-Free Single-Walled Carbon Nanotubes by Molecular Dynamics Method

〇Ryo Yoshikawa¹, Yukai Takagi¹, Shohei Chiashi¹, Shigeo Maruyama^1,2 (1.Univ. of Tokyo, 2.AIST)

10:00 AM - 10:15 AM

△ [14a-2U-5] Edge investigation of metal-catalyst free CVD grown nanotube forest on SiC substrate

〇(M1)Yu HIRANO¹, Masafumi INABA¹, Kazuma SUZUKI¹, Wenxi FEI¹, Wataru NORIMATSU², Michiko KUSUNOKI², Hiroshi KAWARADA¹ (1.Waseda Univ., 2.Nagoya Univ.)

10:15 AM - 10:30 AM

△ [14a-2U-6] Growth of spinnable ultra-long MWCNT array using a mist CVD method

〇Toshiya Kinoshita¹, Takayuki Nakano¹, Yoku Inoue¹, Tauto Nakanishi², Kentaro Ishikawa² (1.Shizuoka Univ., 2.JNC)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[14a-2U-7] In situ measurement of the growth rates of carbon nanotubes in different growth modes

〇Hideto Yoshida¹, Seiji Takeda¹ (1.ISIR, Osaka Univ.)

11:00 AM - 11:15 AM

[14a-2U-8] Formation of transparent conductive films deriverd from fulleren films

〇maho iwamura¹, Kazuki Ishii², Takatoshi Yamada³, Toru Kuzumaki^1,2 (1.Grad,Sch.Eng,Tokai Univ, 2.Tokai Univ, 3.AIST)

11:15 AM - 11:30 AM

[14a-2U-9] In situ Infrared spectroscopic study of 10 keV Electron-Beam-irradiated C₆₀ films

〇daisuke katou¹, Masato Nakaya¹, Shinta Watanabe¹, Jun Onoe¹ (1.Nagoya Univ.)

11:30 AM - 11:45 AM

[14a-2U-10] Fabrication of Highly Oriented One-Dimensional C₆₀ Polymer Films and Characterization of Their Electrical Properties

〇shintaro umeda¹, Masato Nakaya¹, Tatsuya Kameyama¹, Tsukasa Torimoto¹, Shinta Watanabe¹, Jun Onoe¹ (1.Nagoya Univ.)

11:45 AM - 12:00 PM

[14a-2U-11] Gas Storage Properties of 1D Peanut-Shaped C₆₀ polymer films by Air Exposure

〇Masato Nakaya¹, Shintaro Umeda¹, Daisuke Kato¹, Shinta Watanabe¹, Jun Onoe¹ (1.Nagoya Univ.)

12:00 PM - 12:15 PM

[14a-2U-12] Investigation of catalysts and catalytic supporter for synthesis of multi-walled carbon nanocoils

〇Tetsuo Iida¹, Yoshiyuki Suda¹, Toru Harigai¹, Hirofumi Takikawa¹, Hitoshi Ue², Kazuki Shimizu³, Yoshito Umeda⁴ (1.Toyohashi Univ. of Technol., 2.Tokai Carbon, 3.Shonan Plastic. Mfg, 4.Toho Gas)

Oral presentation

[14p-2T-1~14] 17.1 Growth technology

Mon. Sep 14, 2015 1:45 PM - 5:30 PM 2T (232)

座長:藤井健志(富士電機),前橋兼三(農工大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

[14p-2T-1] [Young Scientist Presentation Award Speech] Direct Synthesis of Graphene on Polymer Films and its Device Applications

〇Yusuke Ishibashi¹, Yasushi Kanai¹, Ohno Yasuhide^1,2, Kenzo Maehashi^1,3, Koichi Inoue¹, Kazuhiko Matsumoto¹ (1.ISIR, Osaka Univ., 2.Tokushima Univ., 3.TUAT)

2:00 PM - 2:15 PM

[14p-2T-2] Analysis of h-BN multi-layers synthesized with chemical vapor deposition

〇Daiyu Kondo¹, Kenjiro Hayashi¹, Masako Kataoka¹, Taisuke Iwai¹, Shintaro Sato¹ (1.Fujitsu Labs.)

2:15 PM - 2:30 PM

▼ [14p-2T-3] Chemical vapor deposition of hexagonal boron nitride (hBN) and its H₂ induced anisotropic etching

〇(P)Subash Sharma¹, Golap Kalita¹, Masaki Tanemura¹ (1.Nagoya Inst of Tech)

2:30 PM - 2:45 PM

[14p-2T-4] Theoretical study of multiatomic vacancies in single layer h-BN

〇Syu Urasaki¹, Kageshima Hiroyuki¹ (1.Shimane Univ.)

2:45 PM - 3:00 PM

△ [14p-2T-5] Position-Controlled Graphene Growth on Micropatterned Surface of Copper Catalyst

〇(M1)Yuki Mori¹, Takashi Ikuta¹, Takao Ono¹, Yasushi Kanai¹, Yasuhide Ohno^1,2, Kenzo Maehashi^1,3, Koichi Inoue¹, Kazuhiko Matsumoto¹ (1.ISIR, Osaka Univ., 2.Tokushima Univ., 3.TUAT)

3:00 PM - 3:15 PM

△ [14p-2T-6] Direct growth of graphene on insulated substrates using carbon diffusion

〇Katsumi Obayashi¹, Kuniharu Takei¹, Seiji Akita¹, Takayuki Arie¹ (1.Osaka Pref. Univ)

3:15 PM - 3:30 PM

△ [14p-2T-7] Low-activation energy process of graphene formation by plasma CVD

〇Ryuichi Kato¹, Satoshi Minami¹, Masataka Hasegawa^1,2 (1.TASC, 2.AIST)

3:30 PM - 3:45 PM

△ [14p-2T-8] Observation of the growth of graphene at initial stage synthesized by gallium vapor assisted chemical vapor deposition

〇Xizi Gu^1,2, Shunsuke Tanaka^1,2, Takuya Iijima¹, Katsuhisa Murakami^1,2, Jun-ichi Fujita^1,2 (1.Univ. Tsukuba, 2.TIMS)

3:45 PM - 4:00 PM

[14p-2T-9] Synthesis of multilayer Graphene by Thermal CVD and Microwave Surface Wave Plasma CVD combination

〇(PC)Susumu Ichimura^1,2, Hideo Uchida¹, Koichi Wakita¹, Yasuhiko Hayashi², Masayoshi Umeno¹ (1.Chubu Univ., 2.Okayama Univ.)

4:00 PM - 4:15 PM

[14p-2T-10] A New Process of Preparing Graphene Films from Organic Compounds Ⅲ

〇Miku Nishimura¹, Mikihiro Kato¹, Xinwei Zhao¹ (1.Tokyo Univ. of Science)

Break （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

▲ [14p-2T-11] In-situ oxygen evolution from substrate holder for large graphene crystal growth in an
atmospheric pressure CVD.

〇(D)Kamal Sharma¹, Golap Kalita¹, Masaki Tanemura¹ (1.Nagoya Inst of Techn)

4:45 PM - 5:00 PM

[14p-2T-12] In-situ observation of effect of substrate heating on CVD growth of graphene

〇Tomoo Terasawa^1,2, Tadanobu Taira², Koichiro Saiki² (1.Univ. of Tsukuba, 2.Univ. of Tokyo)

5:00 PM - 5:15 PM

[14p-2T-13] Observing Graphene Growth on copper-indium alloy with in-situ SEM

〇Yudai Hoshi¹, Junro Takahashi¹, Hiroki Kato¹, Yoshikazu Homma¹ (1.Tokyo Univ. of Science)

5:15 PM - 5:30 PM

▲ [14p-2T-14] Molecular Assembly Connects Graphene Nanoribbons

〇Patrick Han^1,2, Kazuto Akagi¹, Filippo Federici Canova³, Paul S. Weiss^1,2, Naoki Asao¹, Taro Hitosugi¹ (1.WPI-AIMR, 2.UCLA, 3.Alto Science Inst.)

Oral presentation

[15p-2U-2~11] 17.1 Growth technology

Tue. Sep 15, 2015 2:00 PM - 4:45 PM 2U (233)

座長:安藤淳(産総研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

△ [15p-2U-2] Large Area Synthesis of Monolayer Tungsten Disulfide and its Growth Mechanism

〇TOMOYUKI TAKAHASHI¹, Toshiaki Kato¹, Toshiro Kaneko¹ (1.Dept. of Electronic Eng., Tohoku Univ.)

2:15 PM - 2:30 PM

△ [15p-2U-3] Growth and optical properties of high-quality monolayer WS₂ on graphite

〇(M2)Yu Kobayashi¹, Shogo Sasaki¹, Shohei Mori¹, Hiroki Hibino², Zheng Liu³, Kenji Watanabe⁴, Takashi Taniguchi⁴, Kazu Suenaga³, Yutaka Maniwa¹, Yasumitsu Miyata^1,5 (1.Tokyo Mtro. Univ., 2.NTT, 3.AIST, 4.NIMS, 5.JST-PRESTO)

2:30 PM - 2:45 PM

[15p-2U-4] CVD growth and characterization of Nb-doped WS₂ monolayers

〇shogo sasaki¹, Yu Kobayashi¹, Yutaka Maniwa¹, Yasumitsu Miyata^1,2 (1.Tokyo Metro. Univ., 2.JST-PRESTO)

2:45 PM - 3:00 PM

[15p-2U-5] Synthesis and characterization of Mo_1-xRe_xS₂/MoS₂ heterostructures

〇Syohei Mori¹, Yutaka Maniwa¹, Yasumitsu Miyata^1,2 (1.Tokyo Metro. Univ., 2.JST-PRESTO.)

3:00 PM - 3:15 PM

△ [15p-2U-6] Formation of Layered MoS₂by Sulfurization of E-beam Evaporated Mo Thin Film using (t-C₄H₉)₂S₂

〇Yusuke Hibino¹, Seiya Ihishara¹, Naomi Sawamoto¹, Takumi Ohashi², Kentarou Matsuura², Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Hitoshi Wakabayashi², Atsushi Ogura¹ (1.Meiji Univ., 2.Tokyo Institute of Technology, 3.Gas Phase Growth Ltd.)

Break （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

△ [15p-2U-7] Fabrication of Single-Layer MoS₂ Thin Film by Combination of Sputtering Deposition and Sulfurization Annealing using Organic Precursor

〇SEIYA ISHIHARA¹, YUSUKE HIBINO¹, NAOMI SAWAMOTO¹, KOHEI SUDA¹, TAKUMI OHASHI², KENTAROU MATSUURA², HIDEAKI MACHIDA³, MASATO ISHIKAWA³, HIROSHI SUDOH³, HITOSHI WAKABAYASHI², ATSUSHI OGURA¹ (1.Meiji Univ., 2.Tokyo Tech., 3.Gas-phase Growth Ltd.)

3:45 PM - 4:00 PM

▼ [15p-2U-8] Growth of highly-oriented MoS₂ thin films over large-area

〇(DC)Sinae Heo^1,2, Ryoma Hayakawa¹, Toyohiro Chikyow¹, Yutaka Wakayama^1,2 (1.National Institute for Materials Science, 2.Kyushu University)

4:00 PM - 4:15 PM

△ [15p-2U-9] First-principles calculations of the orientation of MoS₂ on Al₂O₃(0001) substrate

〇Hideyuki Jippo¹, Kenjiro Hayashi¹, Shintaro Sato¹, Mari Ohfuchi¹ (1.Fujitsu Labs. Ltd.)

4:15 PM - 4:30 PM

[15p-2U-10] Theoretical Study of Very Initial Stage of MoS₂Crystal Growth

〇(M1)katsuya okada¹, Hiroyuki Kageshima¹ (1.Shimane Univ.)

4:30 PM - 4:45 PM

▼ [15p-2U-11] Vertical Heterostructures of MoS₂ and Graphene Nanoribbons by Two-Step Chemical Vapor Deposition for High-Gain Photodetectors

〇(D)Rozan Mohamad Yunus¹, Hiroko Endo¹, Masaharu Tsuji¹, Hiroki Ago^1,2 (1.Kyushu Univ., 2.PRESTO-JST)

Sessions

17 Nanocarbon Technology » 17.1 Growth technology

[14a-2T-1~12] 17.1 Growth technology

▲ [14a-2T-5] Chemical Surface Modification of Graphene Oxide (GO) by Femtosecond Laser Pulse Irradiation

△ [14a-2T-8] Evaluation of Graphene on 4H-SiC(0001) with CF4 Plasma Treatment

△ [14a-2T-9] Observation of growing process of graphene formed by laser-induced growth on step & terrace structure of SiC (0001)

[14a-2U-1~12] 17.1 Growth technology

△ [14a-2U-5] Edge investigation of metal-catalyst free CVD grown nanotube forest on SiC substrate

△ [14a-2U-6] Growth of spinnable ultra-long MWCNT array using a mist CVD method

[14p-2T-1~14] 17.1 Growth technology

▼ [14p-2T-3] Chemical vapor deposition of hexagonal boron nitride (hBN) and its H2 induced anisotropic etching

△ [14p-2T-5] Position-Controlled Graphene Growth on Micropatterned Surface of Copper Catalyst

△ [14p-2T-6] Direct growth of graphene on insulated substrates using carbon diffusion

△ [14p-2T-7] Low-activation energy process of graphene formation by plasma CVD

△ [14p-2T-8] Observation of the growth of graphene at initial stage synthesized by gallium vapor assisted chemical vapor deposition

▲ [14p-2T-11] In-situ oxygen evolution from substrate holder for large graphene crystal growth in anatmospheric pressure CVD.

▲ [14p-2T-14] Molecular Assembly Connects Graphene Nanoribbons

[15p-2U-2~11] 17.1 Growth technology

△ [15p-2U-2] Large Area Synthesis of Monolayer Tungsten Disulfide and its Growth Mechanism

△ [15p-2U-3] Growth and optical properties of high-quality monolayer WS2 on graphite

△ [15p-2U-6] Formation of Layered MoS2 by Sulfurization of E-beam Evaporated Mo Thin Film using (t-C4H9)2S2

△ [15p-2U-7] Fabrication of Single-Layer MoS2 Thin Film by Combination of Sputtering Deposition and Sulfurization Annealing using Organic Precursor

▼ [15p-2U-8] Growth of highly-oriented MoS2 thin films over large-area

△ [15p-2U-9] First-principles calculations of the orientation of MoS2 on Al2O3(0001) substrate

▼ [15p-2U-11] Vertical Heterostructures of MoS2 and Graphene Nanoribbons by Two-Step Chemical Vapor Deposition for High-Gain Photodetectors

Authentication

△ [14a-2T-8] Evaluation of Graphene on 4H-SiC(0001) with CF₄ Plasma Treatment

▼ [14p-2T-3] Chemical vapor deposition of hexagonal boron nitride (hBN) and its H₂ induced anisotropic etching

▲ [14p-2T-11] In-situ oxygen evolution from substrate holder for large graphene crystal growth in an
atmospheric pressure CVD.

△ [15p-2U-3] Growth and optical properties of high-quality monolayer WS₂ on graphite

△ [15p-2U-6] Formation of Layered MoS₂by Sulfurization of E-beam Evaporated Mo Thin Film using (t-C₄H₉)₂S₂

△ [15p-2U-7] Fabrication of Single-Layer MoS₂ Thin Film by Combination of Sputtering Deposition and Sulfurization Annealing using Organic Precursor

▼ [15p-2U-8] Growth of highly-oriented MoS₂ thin films over large-area

△ [15p-2U-9] First-principles calculations of the orientation of MoS₂ on Al₂O₃(0001) substrate

▼ [15p-2U-11] Vertical Heterostructures of MoS₂ and Graphene Nanoribbons by Two-Step Chemical Vapor Deposition for High-Gain Photodetectors