The 76th JSAP Autumn Meeting, 2015

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Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 15, 2015 1:30 PM - 5:30 PM 1A (131+132)

座長:黒木 伸一郎(広島大),升本 恵子(産総研)

2:30 PM - 2:45 PM

[15p-1A-5] Low resistance SiC/Carbon Interstitial type Metal/Ni ohmic contact formation by Laser annealing

〇Desilva Milantha1, Seiji Ishikawa2, Tomonori Maeda2, Hiroshi Sezaki2, Takamaro Kikkawa1, Shin-Ichiro Kuroki1 (1.Hiroshima Univ. RNBS, 2.Phenitec Semi.Corp.)

Keywords:SiC,Ohmic,Laser annealing