Oral presentation

[14a-D2-1~10] 10.4 Semiconductors, organic, optical, and quantum spintronics

Sat. Mar 14, 2015 9:00 AM - 12:00 PM D2 (16-102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:30 AM

[14a-D2-1] [Isamu Akasaki Award Speech] From AlInAs/GaInAs to Ferromagnetic Semiconductor GaMnAs

〇Hideo Ohno¹ (1.Tohoku Univ.)

9:30 AM - 9:45 AM

▲ [14a-D2-2] [Young Scientist Presentation Award Speech] Electrical modulation of ferromagnetism via controlling the wavefunction in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

〇Duc Anh Le¹, Nam Hai Pham^1,², Yuichi Kasahara^1,³, Yoshihiro Iwasa^1,⁴, Masaaki Tanaka¹ (1.The University of Tokyo, 2.Tokyo Institute of Technology, 3.Kyoto University, 4.RIKEN Center for Emergent Matter Science)

9:45 AM - 10:00 AM

▼ [14a-D2-3] Temperature dependent direction of in-plane uniaxial magnetic anisotropy in (Ga,Mn)As codoped with Li

〇Shohei Miyakozawa¹, Lin Chen², Fumihiro Matsukura^2,³, Hideo Ohno^1,^2,³ (1.LNS-RIEC, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.CSIS, Tohoku Univ.)

10:00 AM - 10:15 AM

▼ [14a-D2-4] Room-temperature local ferromagnetism and its nanoscale domain growth in the ferromagnetic semiconductor Ge_1-xFe_x

〇(D)Yuuki Wakabayashi¹, Shoya Sakamoto¹, Keisuke Ishigami¹, Yukio Takahashi¹, Yukiharu Takeda², Yuji Saitoh², Hiroshi Yamagami², Atushi Fujimori¹, Masaaki Tanaka¹, Shinobu Ohya¹ (1.Univ. of Tokyo, 2.JAEA)

10:15 AM - 10:30 AM

▼ [14a-D2-5] Fabrication and evaluation of a GaMnAs-based three-terminal magnetoresistance-modulation device

〇Toshiki Kanaki¹, Hirokatsu Asahara², Shinobu Ohya¹, Masaaki Tanaka¹ (1.The Univ. of Tokyo, Graduate School, 2.The Univ. of Tokyo)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

▼ [14a-D2-6] The dependence on carrier density, Co content, and thickness of magnetic domain structure in anatase (Ti,Co)O₂ thin films

〇(D)Thantip Krasienapibal¹, Tomoteru Fukumura^1,^2,³, Tetsuya Hasegawa^1,^2,³ (1.University of Tokyo, 2.JST-CREST, 3.KAST)

11:00 AM - 11:15 AM

▼ [14a-D2-7] Intrinsic spectrum of reflection magnetic circular dichroism of GaMnAs thin films

〇Hiroshi Terada¹, Shinobu Ohya¹, Masaaki Tanaka¹ (1.The Univ. of Tokyo)

11:15 AM - 11:30 AM

▼ [14a-D2-8] Band structure of GaMnAs near the Fermi level studied by time-resolved light-induced reflectivity measurements

〇(M2)Tomoaki Ishii¹, Tadashi Kawazoe¹, Yusuke Hashimoto², Hiroshi Terada¹, Iriya Muneta¹, Motoichi Ohtsu¹, Masaaki Tanaka¹, Shinobu Ohya¹ (1.The Univ. of Tokyo, 2.Radboud Univ. Nijmegen)

11:30 AM - 11:45 AM

▲ [14a-D2-9] The effect of F-doping on magnetism in diluted magnetic semiconductor (Zn,Co)O thin films

〇(M2)Ryo Ishikawa¹, Shinji Kuroda¹, Hironori Ofuchi² (1.Grad. School of Pure & Appl. Sci., Univ. Tsukuba, 2.JASRI/SPring-8)

11:45 AM - 12:00 PM

▼ [14a-D2-10] Magneto-optical and magneto-transport characteristics of heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

〇Thanh Tu Nguyen¹, Pham Nam Hai^1,², Le Duc Anh¹, Masaaki Tanaka¹ (1.Tokyo Univ., 2.Tokyo Tech Inst.)

Oral presentation

[14p-D2-1~8] 10.4 Semiconductors, organic, optical, and quantum spintronics

Sat. Mar 14, 2015 1:00 PM - 3:00 PM D2 (16-102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

▲ [14p-D2-1] A phenomenological model for the helicity dependent photocurrent in a ferromagnet – insulator – semiconductor junction

〇(D)Ronel Roca¹, Nozomi Nishizawa¹, Takashi Matsuda¹, Hiro Munekata¹ (1.Tokyo Tech.)

1:15 PM - 1:30 PM

▼ [14p-D2-2] Electrical detection of the ratio of Rashba and Dresselhaus spin orbit interactions in InGaAs/InAlAs quantum wires

〇Kohei Yoshizumi¹, Makoto Kohda¹, Junsaku Nitta¹ (1.Tohoku Univ.)

1:30 PM - 1:45 PM

▲ [14p-D2-3] Spatial mapping of spin polarization in InGaAs quantum wells at high temperature using Monte Carlo simulation

〇RYOTA KUROSAWA¹, KEN MORITA¹, YOSHIHIRO ISHITANI¹ (1.Chiba Univ.)

1:45 PM - 2:00 PM

▲ [14p-D2-4] Electrical control of drifting spin coherence in GaAs quantum well

〇Yoji Kunihashi¹, Haruki Sanada¹, Hideki Gotoh¹, Koji Onomitsu¹, Makoto Kohda², Junsaku Nitta², Tetsuomi Sogawa¹ (1.NTT BRL, 2.Tohoku Univ.)

2:00 PM - 2:15 PM

▼ [14p-D2-5] Electric-Field Dependence of Coherence Time of the Electron Spin in the Diamond Nitrogen-Vacancy Center

〇Satoshi Kobayashi^1,², Hiroki Morishita¹, Shinji Miwa¹, Yoshishige Suzuki¹, Norikazu Mizuochi^1,² (1.Osaka Univ., 2.CREST)

2:15 PM - 2:30 PM

▼ [14p-D2-6] Electrical detection of nuclear magnetic resonance in GaAs using Heusler alloy Co₂MnSi

〇Takafumi Akiho¹, Yuya Ebina¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (1.Grad. School of Information Science and Technology, Hokkaido Univ.)

2:30 PM - 2:45 PM

▲ [14p-D2-7] Dynamical spin injection into solution-processed Carbon-nanotubes

〇(B)Hiroshi Nagano¹, Yuichiro Ando¹, Teruya Shinjo¹, Hiromichi Kataura², Takeshi Tanaka², Masashi Shiraishi¹ (1.Kyoto Univ., 2.AIST)

2:45 PM - 3:00 PM

[14p-D2-8] Electron spin resonance of magnesium oxide thin films grown on silicon

〇kan hayashi¹, yoshito matsumura¹, hiroki morishita¹, hayato koike², shinji miwa¹, norikazu mizuochi¹, yoshishige suzuki¹ (1.Osaka Univ., 2.TDK)

Sessions

10 Spintronics and Magnetics » 10.4 Semiconductors, organic, optical, and quantum spintronics

[14a-D2-1~10] 10.4 Semiconductors, organic, optical, and quantum spintronics

[14a-D2-1] [Isamu Akasaki Award Speech] From AlInAs/GaInAs to Ferromagnetic Semiconductor GaMnAs

▲ [14a-D2-2] [Young Scientist Presentation Award Speech] Electrical modulation of ferromagnetism via controlling the wavefunction in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

▼ [14a-D2-3] Temperature dependent direction of in-plane uniaxial magnetic anisotropy in (Ga,Mn)As codoped with Li

▼ [14a-D2-4] Room-temperature local ferromagnetism and its nanoscale domain growth in the ferromagnetic semiconductor Ge_1-xFe_x

▼ [14a-D2-5] Fabrication and evaluation of a GaMnAs-based three-terminal magnetoresistance-modulation device

▼ [14a-D2-6] The dependence on carrier density, Co content, and thickness of magnetic domain structure in anatase (Ti,Co)O₂ thin films

▼ [14a-D2-7] Intrinsic spectrum of reflection magnetic circular dichroism of GaMnAs thin films

▼ [14a-D2-8] Band structure of GaMnAs near the Fermi level studied by time-resolved light-induced reflectivity measurements

▲ [14a-D2-9] The effect of F-doping on magnetism in diluted magnetic semiconductor (Zn,Co)O thin films

▼ [14a-D2-10] Magneto-optical and magneto-transport characteristics of heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

[14p-D2-1~8] 10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [14p-D2-1] A phenomenological model for the helicity dependent photocurrent in a ferromagnet – insulator – semiconductor junction

▼ [14p-D2-2] Electrical detection of the ratio of Rashba and Dresselhaus spin orbit interactions in InGaAs/InAlAs quantum wires

▲ [14p-D2-3] Spatial mapping of spin polarization in InGaAs quantum wells at high temperature using Monte Carlo simulation

▲ [14p-D2-4] Electrical control of drifting spin coherence in GaAs quantum well

▼ [14p-D2-5] Electric-Field Dependence of Coherence Time of the Electron Spin in the Diamond Nitrogen-Vacancy Center

▼ [14p-D2-6] Electrical detection of nuclear magnetic resonance in GaAs using Heusler alloy Co₂MnSi

▲ [14p-D2-7] Dynamical spin injection into solution-processed Carbon-nanotubes

[14p-D2-8] Electron spin resonance of magnesium oxide thin films grown on silicon

Authentication

Sessions

10 Spintronics and Magnetics » 10.4 Semiconductors, organic, optical, and quantum spintronics

[14a-D2-1~10] 10.4 Semiconductors, organic, optical, and quantum spintronics

[14a-D2-1] [Isamu Akasaki Award Speech] From AlInAs/GaInAs to Ferromagnetic Semiconductor GaMnAs

▲ [14a-D2-2] [Young Scientist Presentation Award Speech] Electrical modulation of ferromagnetism via controlling the wavefunction in n-type ferromagnetic semiconductor (In,Fe)As quantum wells

▼ [14a-D2-3] Temperature dependent direction of in-plane uniaxial magnetic anisotropy in (Ga,Mn)As codoped with Li

▼ [14a-D2-4] Room-temperature local ferromagnetism and its nanoscale domain growth in the ferromagnetic semiconductor Ge1-xFex

▼ [14a-D2-5] Fabrication and evaluation of a GaMnAs-based three-terminal magnetoresistance-modulation device

▼ [14a-D2-6] The dependence on carrier density, Co content, and thickness of magnetic domain structure in anatase (Ti,Co)O2 thin films

▼ [14a-D2-7] Intrinsic spectrum of reflection magnetic circular dichroism of GaMnAs thin films

▼ [14a-D2-8] Band structure of GaMnAs near the Fermi level studied by time-resolved light-induced reflectivity measurements

▲ [14a-D2-9] The effect of F-doping on magnetism in diluted magnetic semiconductor (Zn,Co)O thin films

▼ [14a-D2-10] Magneto-optical and magneto-transport characteristics of heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

[14p-D2-1~8] 10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [14p-D2-1] A phenomenological model for the helicity dependent photocurrent in a ferromagnet – insulator – semiconductor junction

▼ [14p-D2-2] Electrical detection of the ratio of Rashba and Dresselhaus spin orbit interactions in InGaAs/InAlAs quantum wires

▲ [14p-D2-3] Spatial mapping of spin polarization in InGaAs quantum wells at high temperature using Monte Carlo simulation

▲ [14p-D2-4] Electrical control of drifting spin coherence in GaAs quantum well

▼ [14p-D2-5] Electric-Field Dependence of Coherence Time of the Electron Spin in the Diamond Nitrogen-Vacancy Center

▼ [14p-D2-6] Electrical detection of nuclear magnetic resonance in GaAs using Heusler alloy Co2MnSi

▲ [14p-D2-7] Dynamical spin injection into solution-processed Carbon-nanotubes

[14p-D2-8] Electron spin resonance of magnesium oxide thin films grown on silicon

Authentication

▼ [14a-D2-4] Room-temperature local ferromagnetism and its nanoscale domain growth in the ferromagnetic semiconductor Ge_1-xFe_x

▼ [14a-D2-6] The dependence on carrier density, Co content, and thickness of magnetic domain structure in anatase (Ti,Co)O₂ thin films

▼ [14p-D2-6] Electrical detection of nuclear magnetic resonance in GaAs using Heusler alloy Co₂MnSi