The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 9:00 AM - 12:00 PM A21 (6A-213)

11:15 AM - 11:30 AM

[11a-A21-9] Interface Characterization of 4H-SiC MOSFETs by Pulse I-V Measurements

〇KOSUKE ISONO1, HIROSHI YANO1, 2, TAKASHI FUYUKI1 (1.NAIST, 2.Univ. Tsukuba)

Keywords:4H-SiC,interface characterization,pulse I-V